H01S5/0683

LASER DEVICE
20220385021 · 2022-12-01 · ·

A laser device includes: a first reflecting unit; a second reflecting unit; a gain unit provided between the first reflecting unit and the second reflecting unit; a divider provided after the first reflecting unit and configured to divide laser light from the first reflecting unit into first light and second light; a first end portion positioned separately from the divider in a first direction, and positioned after the divider, the first end portion being configured to output, as output light, the first light or the first light that has been amplified; and a second end portion positioned separately from the divider in a second direction different from the first direction, the second end portion being configured to output the second light.

INSPECTION METHOD FOR SEMICONDUCTOR LASER DEVICE AND INSPECTION DEVICE FOR SEMICONDUCTOR LASER DEVICE
20220376465 · 2022-11-24 · ·

An inspection method for inspecting a semiconductor laser device integrated with a semiconductor laser, an electroabsorption modulator for input the output of the semiconductor laser, and a photodetector for detecting intensity of part of the laser light output from the semiconductor laser includes a step of acquiring a transverse-mode light output characteristic that is a relationship between an injection current to the semiconductor laser and the output of the photodetector; a step of applying a reverse bias voltage to the electroabsorption modulator and acquiring a total light output characteristic that is a relationship between the injection current to the semiconductor laser and a photocurrent output from the electroabsorption modulator; and a step of comparing the total light output characteristic with the transverse-mode light output characteristic, thereby to determine whether or not the semiconductor laser device under inspection is abnormal in the transverse mode.

INSPECTION METHOD FOR SEMICONDUCTOR LASER DEVICE AND INSPECTION DEVICE FOR SEMICONDUCTOR LASER DEVICE
20220376465 · 2022-11-24 · ·

An inspection method for inspecting a semiconductor laser device integrated with a semiconductor laser, an electroabsorption modulator for input the output of the semiconductor laser, and a photodetector for detecting intensity of part of the laser light output from the semiconductor laser includes a step of acquiring a transverse-mode light output characteristic that is a relationship between an injection current to the semiconductor laser and the output of the photodetector; a step of applying a reverse bias voltage to the electroabsorption modulator and acquiring a total light output characteristic that is a relationship between the injection current to the semiconductor laser and a photocurrent output from the electroabsorption modulator; and a step of comparing the total light output characteristic with the transverse-mode light output characteristic, thereby to determine whether or not the semiconductor laser device under inspection is abnormal in the transverse mode.

Tailoring of high power VCSEL arrays

Modification of the topology of selected regions of individual VCSEL devices during fabrication is utilized to provide an array output beam with specific characteristics (e.g., “uniform” output power across the array). These physical features include the width of the metal aperture, the width of the modal filter, and/or the geometry of the contact ring structure on the top of the VCSEL device. The modifications may also function to adjust the numerical apertures (NAs) of the devices, the beam waist, wallplug efficiency, and the like.

Tailoring of high power VCSEL arrays

Modification of the topology of selected regions of individual VCSEL devices during fabrication is utilized to provide an array output beam with specific characteristics (e.g., “uniform” output power across the array). These physical features include the width of the metal aperture, the width of the modal filter, and/or the geometry of the contact ring structure on the top of the VCSEL device. The modifications may also function to adjust the numerical apertures (NAs) of the devices, the beam waist, wallplug efficiency, and the like.

METHOD OF CONTROLLING AN OPTICAL OUTPUT POWER OF A LASER DIODE, CONTROL DEVICE AND SYSTEM
20220368103 · 2022-11-17 ·

A method of controlling an optical output power of a laser diode associated with a photodiode includes obtaining first optical trimming parameters indicative of a first optical output power of the laser diode at a first laser diode current and a second optical output power of the laser diode at a second laser diode current above lasing threshold. Next, second electrical trimming parameters indicative of a photodiode characteristic curve of photodiode current versus laser diode current are obtained. A first photodiode current and a second photodiode current at a laser diode currents below lasing threshold. A slope of a photodiode current versus laser diode current is determined. The optical output power of the laser diode above lasing threshold is controlled based on the first optical trimming parameters, the second electrical trimming parameters and the slope of the photodiode current versus laser diode current below lasing threshold.

METHOD OF CONTROLLING AN OPTICAL OUTPUT POWER OF A LASER DIODE, CONTROL DEVICE AND SYSTEM
20220368103 · 2022-11-17 ·

A method of controlling an optical output power of a laser diode associated with a photodiode includes obtaining first optical trimming parameters indicative of a first optical output power of the laser diode at a first laser diode current and a second optical output power of the laser diode at a second laser diode current above lasing threshold. Next, second electrical trimming parameters indicative of a photodiode characteristic curve of photodiode current versus laser diode current are obtained. A first photodiode current and a second photodiode current at a laser diode currents below lasing threshold. A slope of a photodiode current versus laser diode current is determined. The optical output power of the laser diode above lasing threshold is controlled based on the first optical trimming parameters, the second electrical trimming parameters and the slope of the photodiode current versus laser diode current below lasing threshold.

OPTICAL MODULE AND METHOD OF MANUFACTURING OPTICAL MODULE

An optical module includes: an optical element; a housing configured to house the optical element; as electrical terminal arranged on an outer peripheral surface of the housing and electrically connected to an inside of the housing; and a positioning unit configured to determine a relative position of a wiring board electrically connected to the electrical terminal from outside of the housing, with respect to the electrical terminal.

OPTICAL MODULE AND METHOD OF MANUFACTURING OPTICAL MODULE

An optical module includes: an optical element; a housing configured to house the optical element; as electrical terminal arranged on an outer peripheral surface of the housing and electrically connected to an inside of the housing; and a positioning unit configured to determine a relative position of a wiring board electrically connected to the electrical terminal from outside of the housing, with respect to the electrical terminal.

OPTICAL INTEGRATED CIRCUIT SENSOR PACKAGE USING A STACKED CONFIGURATION FOR THE SENSOR DIE AND THE EMITTER DIE
20220368100 · 2022-11-17 · ·

An optical sensor package includes an emitter die mounted to an upper surface of a package substrate. A sensor die is mounted to the upper surface of the package substrate using a film on die (FOD) adhesive layer that extends over the upper surface and encapsulates the emitter die. The sensor die is positioned in a stacked relationship with respect to the emitter die such that a light channel region which extends through the sensor die is optically aligned with the emitter die. Light emitted by the emitter die passes through the light channel region of the sensor die. The emitter die and the sensor die are each electrically coupled to the package substrate.