A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.

A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.

A lateral current injection electro-optical device includes a slab having a pair of structured, doped layers of III-V semiconductor materials arranged side-by-side in the slab, the pair including an n-doped layer and a p-doped layer, each of the p-doped layer and the n-doped layer includes a two-dimensional photonic crystal, and a separation section extending between the pair of structured layers, the separation section separates the pair of structured layers, the separation section includes current blocking trenches, and an active region of III-V semiconductor gain materials between the current blocking trenches that form a photonic crystal cavity.

A process of forming a semiconductor optical device is disclosed. The semiconductor optical device provides a waveguide structure accompanied with a heater for varying a temperature of the waveguide structure. The process includes steps of: (a) forming a striped mask on a semiconductor substrate; (b) selectively growing a dummy layer on the semiconductor substrate; (c) removing the patterned mask; (d) burying the dummy layer by a supplemental layer; (e) exposing a portion of the dummy layer by etching a portion of the supplemental layer; (f) and removing the dummy layer by immersing the dummy layer within a solution that shows an etching rate for the dummy layer enough faster than an etching rate for the supplemental layer and the substrate so as to leave a void in a region the dummy layer had existed.

Methods, systems, and apparatus, including a laser including a layer having first and second regions, the first region including a void; a mirror section provided on the layer, the mirror section including a waveguide core, at least part of the waveguide core is provided over at least a portion of the void; a first grating provided on the waveguide core; a first cladding layer provided between the layer and the waveguide core and supported by the second region of the layer; a second cladding layer provided on the waveguide core; and a heat source configured to change a temperature of at least one of the waveguide core and the grating, where an optical mode propagating in the waveguide core of the mirror section does not incur substantial loss due to interaction with portions of the mirror section above and below the waveguide core.

A semiconductor laser is disclosed. Trim loss region is provided in inner ridge region of surface of transmission layer facing away from substrate, blind hole is provided in trim loss region, and distance from bottom surface of blind hole to surface of second cladding layer facing to substrate is smaller than evanescent wave length in transmission layer. Blind hole can affect optical field characteristics of light transmission in semiconductor laser by affecting evanescent wave. A method for fabricating a semiconductor laser is also provided.

In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.

Methods, systems, and apparatus, including an optical receiver including an optical source, including a substrate; a laser provided on the substrate, the laser having first and second sides and outputting first light from the first side and second light from the second side, the first light output from the first side of the laser has a first power and the second light output from the second side has a second power; and a first modulator that receives the first light and a second modulator that receives the second light, such that the power of the first light at an input of the first modulator is substantially equal to the power of the second light at an input of the second modulator.

A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.