There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of the cylindrical lens is f,

D<f−HA  (1).

A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.

A tunable laser includes a reflective semiconductor optical amplifier (SOA), a grating codirectional coupler, and a reflective microring resonator. The grating codirectional coupler and the reflective microring resonator are both formed on a silicon base. An anti-reflection film is disposed on a first end surface of the reflective SOA, and the first end surface is an end surface, coupled to a first waveguide of the grating codirectional coupler, of the reflective SOA. A second waveguide of the grating codirectional coupler is coupled to the first waveguide, a first grating is disposed on the first waveguide, a second grating disposed opposite to the first grating is disposed on the second waveguide, and the first grating and the second grating constitute a narrow-band pass filter. The second waveguide is connected to the reflective microring resonator.

A laser device includes: a first reflecting unit; a second reflecting unit; a gain unit provided between the first reflecting unit and the second reflecting unit; a divider provided after the first reflecting unit and configured to divide laser light from the first reflecting unit into first light and second light; a first end portion positioned separately from the divider in a first direction, and positioned after the divider, the first end portion being configured to output, as output light, the first light or the first light that has been amplified; and a second end portion positioned separately from the divider in a second direction different from the first direction, the second end portion being configured to output the second light.

There is provided a device to generate an output light. The device comprises a substrate, a quantum well structure (QWS) disposed on the substrate, and a waveguide disposed on the substrate and in contact with the QWS. The QWS has a first layer, a second layer, and a third layer. The second layer is disposed and quantum-confined between the first layer and the third layer. In addition, the second layer is to emit an input light when electrically biased. The input light has an optical field extending outside the QWS and into the waveguide, to optically couple the waveguide with the QWS. The waveguide is to provide an optical resonance cavity for the input light. Moreover, the waveguide has an optical outlet to transmit at least some of the input light out of the waveguide to generate the output light.

Exemplary methods and apparatus may provide optical gates and optical switches using such optical gates. Each optical gate may include a semiconductor optical amplifier that is placed in a substrate. The semiconductor optical amplifier may be coupled to input and output couplers to receive and selectively output optical signals into and out of the substrate.

A hybrid semiconductor laser component comprising at least one first emitting module comprising an active zone shaped to emit electromagnetic radiation at a given wavelength; and an optical layer comprising at least one first waveguide optically coupled with the active zone, the waveguide forming with the active zone an optical cavity resonating at the given wavelength. The hybrid semiconductor laser component also comprises a heat-dissipating semiconductor layer, the heat-dissipating semiconductor layer being in thermal contact with the first emitting module on a surface of the first emitting module that is opposite the optical layer. The invention also relates to a method for manufacturing such a hybrid semiconductor laser component.

Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.