A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.

A quantum cascade laser having a laser structure that includes a semiconductor mesa, a first end surface, a second end surface, and a first electrode provided on the semiconductor mesa. The laser structure includes a first region having the first end surface and a second region located between the second end surface and the first region. The semiconductor mesa includes a first mesa portion and a second mesa portion that are respectively included in the first region and the second region. The semiconductor mesa includes a first superlattice layer, a second superlattice layer, and a conductive semiconductor region. The first superlattice layer extends from the first end surface in the second axis direction and is included in the first mesa portion and the second mesa portion, and the second superlattice layer is provided in one of the first mesa portion and the second mesa portion.

A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

A semiconductor device includes a substrate, a semiconductor laser part formed on the substrate and having an active layer with an uniform composition and a first ridge structure, and an adjacent part formed on the substrate, having a core layer with an uniform composition and a second ridge structure, and being an optical modulator or an optical waveguide which is in contact with the semiconductor laser part, wherein the first ridge structure is largest in width at a first contact part which is in contact with the second ridge structure, and the second ridge structure is largest in width at a second contact part which is in contact with the first ridge structure.

Alight source device includes a resonator having first and second mirrors, a gain medium disposed between the first and second mirrors and including a first semiconductor portion, an active layer, and a second semiconductor portion arranged in this order in a direction perpendicular to an optical axis of the resonator, and having first and second principal surfaces respectively located on sides of the first and second semiconductor portions opposite to sides on which the active layer is provided, a first heat dissipation member located on a first principal surface side of the gain medium, and a second heat dissipation member located on a second principal surface side of the gain medium. The resonator and the gain medium are arranged such that the optical axis passes through the gain medium.

An optical device that includes: a base layer; a first region supported by the base layer, the first region including a first plurality of quantum-confined nanostructures and having a first density of quantum-confined nanostructures; a second region supported by the base layer, the first and second regions being non-overlapping regions, the second region having a second density of quantum-confined nanostructures lower than the first density; and an optical confinement structure supported by the base layer and configured to guide at least one transverse optical mode between a first end and a second end of the optical confinement structure. The first region substantially overlaps with the at least one transverse optical mode, and the first density varies across a cross-section of the optical device.

A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

A quantum cascade laser having a laser structure that includes a semiconductor mesa, a first end surface, a second end surface, and a first electrode provided on the semiconductor mesa. The laser structure includes a first region having the first end surface and a second region located between the second end surface and the first region. The semiconductor mesa includes a first mesa portion and a second mesa portion that are respectively included in the first region and the second region. The semiconductor mesa includes a first superlattice layer, a second superlattice layer, and a conductive semiconductor region. The first superlattice layer extends from the first end surface in the second axis direction and is included in the first mesa portion and the second mesa portion, and the second superlattice layer is provided in one of the first mesa portion and the second mesa portion.

A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 ?m from the at least one recess in at least one direction parallel to the main extension plane of the main surface.