Patent classifications
H01S5/1067
Nanocavity monolayer laser monolithically integrated with LED pump
A laser structure includes a substrate, a buffer layer formed on the substrate and a light emitting diode (LED) formed on the buffer layer. A photonic crystal layer is formed on the LED. A monolayer semiconductor nanocavity laser is formed on the photonic crystal layer for receiving light through the photonic crystal layer from the LED, wherein the LED and the laser are formed monolithically and the LED acts as an optical pump for the laser.
SYSTEM AND METHOD FOR MICRO LASER PARTICLES
Disclosed are photonic particles and methods of using particles in biological samples. The particles are configured to emit laser light when energetically stimulated by, e.g., a pump source. The particles may include a gain medium with inorganic materials, an optical cavity with high refractive index, and a coating with organic materials. The particles may be smaller than 3 microns along their longest axes. The particles may attach to each other to form, e.g., doublets and triplets. The particles may be injection-locked by coupling an injection beam into a particle while pumping so that an injection seed is amplified to develop into laser oscillation. A microscopy system may include a pump source, beam scanner, spectrometer with resolution of less than 1 nanometer and acquisition rate of more than 1 kilohertz, and spectral analyzer configured to distinguish spectral peaks of laser output from broadband background.
METHOD OF TRANSFERRING NANOSTRUCTURES AND DEVICE HAVING THE NANOSTRUCTURES
An illustrative method for transferring nanostructures is provided with the steps of: forming a two-dimensional material (2D material) on a first substrate; forming a plurality of nanostructures on the 2D material; bonding a surface of one or more of the plurality of nanostructures with a head or a second substrate, and/or shaking the one or more nanostructures with or without a fluid; and separating the one or more nanostructures from the 2D material.
Electrically pumped photonic crystal nanolaser
A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).
MULTI-WAVELENGTH SEMICONDUCTOR LASERS
Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.
PRINTING INK AND ELECTRONIC DEVICE
Provided are a printing ink comprising inorganic nano-materials and an electronic device manufactured by printing with the printing ink, in particular, an electroluminescent device. The composition of the provided ink comprises at least one inorganic nano-material, in particular, quantum dots, and at least one ester-based organic solvent.
ELECTRICALLY PUMPED PHOTONIC CRYSTAL NANOLASER
A semiconductor nanolaser includes a rib formed by a stack of layers, in which stack central layers (33, 34, 35) forming an assembly of quantum wells are placed between a lower layer (32) of a first conductivity type and an upper layer (36) of a second conductivity type. Holes (42) are drilled right through the thickness of the rib, wherein the lower layer includes first extensions (38, 40) that extend laterally on either side of the rib, and that are coated with first metallizations (42, 44) that are located a distance away from the rib. The stack includes second extensions (45, 46) that extend longitudinally beyond said rib, and that are coated with second metallizations (47, 48).
Nanophosphors-Converted Quantum Photonic Imager for Efficient Emission of White Light in a Micro-Pixel Array and Methods for Making the Same
An emissive Solid State Imager (SSI) comprised of a spatial array of digitally addressable multicolor micro pixels. The imager efficiently produces white light by means of a photonic layer excited by a nanophosphors nanoparticle structure in a pixel element comprising an optical confinement cavity which may include a micro lens array for directional modulation of the emitted light or an RGB filter for color output. The light generated is emitted via a plurality of vertical optical waveguides that extract and collimate the light.
Continuous-wave pumped colloidal nanocrystal laser
Laser device characterized in that it comprises, as gain medium, a film of colloidal nanocrystals of semiconductor material, wherein said nanocrystals are two-dimensional nanocrystals suitable for forming quantum wells for confinement of the charge carriers in the nanocrystals and having a biexciton gain mechanism.
Enhanced photoluminescence from plasmonic apparatus with two resonant cavity wavelengths
Embodiments include a gain system and method. The system includes a gain medium with a plurality of plasmonic apparatus. Each plasmonic apparatus includes a substrate having a first plasmonic surface, a plasmonic nanoparticle having a second plasmonic surface, and a dielectric-filled gap between the first plasmonic surface and the second plasmonic surface. A plasmonic cavity is created by an assembly of the first plasmonic surface, the second plasmonic surface, and the dielectric-filled gap, and has a first fundamental wavelength .sub.1 and second fundamental wavelength .sub.2. Fluorescent particles are located in the dielectric-filled gap. Each fluorescent particle has an absorption spectrum at the first fundamental wavelength .sub.1 and an emission spectrum at the second fundamental wavelength .sub.2. An excitation applied to the gain medium at the first fundamental wavelength .sub.1 produces an amplified electromagnetic wave emission at the second resonant wavelength .sub.2.