A semiconductor device employs an epitaxial layer arrangement including a first ohmic contact layer and first modulation doped quantum well structure disposed above the first ohmic contact layer. The first ohmic contact layer has a first doping type, and the first modulation doped quantum well structure has a modulation doped layer of a second doping type. At least one isolation ion implant region is provided that extends through the first ohmic contact layer. The at least one isolation ion implant region can include oxygen ions. The at least one isolation ion implant region can define a region that is substantially free of charge carriers in order to reduce a characteristic capacitance of the device. A variety of high performance transistor devices (e.g., HFET and BICFETs) and optoelectronic devices can employ this device structure. Other aspects of wavelength-tunable microresonantors and related semiconductor fabrication methodologies are also described and claimed.

A semiconductor laser resonator configured to generate a laser beam includes a gain medium layer including a semiconductor material and comprising at least one protrusion formed by at least one trench to protrude in an upper portion of the gain medium layer. In the semiconductor laser resonator, the at least one protrusion is configured to confine the laser beam as a standing wave in the at least one protrusion.

According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.

The present disclosure relates to an ultra-small laser oscillator utilizing self-resonance in a pattered indirect bandgap material. The ultra-small laser oscillator using self-resonance according to an embodiment may include a substrate; and a resonator that is formed of transition metal dichalcogenides (TMDs) on the substrate, supports a whispering gallery mode (WGM), and performs lasing in a form of a continuous wave at room temperature.

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: forming a metal chalcogenide quantum dot solid-state element, and carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

A first layer, a first spacer layer, and a second layer of a semiconductor wafer can be etched to produce a plurality of columnar structures extending from the substrate layer and including a first optical cavity situated about the first gain medium, a second optical cavity situated about the second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. Also, a photonic microparticle formed from a layered semiconductor wafer and of a columnar structure having a first optical cavity situated about a first gain medium, a second optical cavity situated about a second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. The first optical cavity and the second optical cavity in the photonic microparticle are each capable of generating laser light with a distinct spectral peak when energetically excited.