A quantum cascade laser includes a semiconductor substrate, an optical waveguide formed on a first surface of the semiconductor substrate, and a temperature adjusting member. The optical waveguide includes a first region and a second region located on one side with respect to the first region in the optical waveguide direction of the optical waveguide. The first region generates a first light having a first wavelength, and the second region generates a second light having a second wavelength. The optical waveguide generates an output light having a frequency corresponding to a difference between the first wavelength and the second wavelength by difference-frequency generation. A recess for suppressing heat transfer between the first region and the second region is formed at a second surface of the semiconductor substrate. The temperature adjusting member includes a first temperature adjusting member for adjusting the temperature of the second region.

A method of performing spectroscopic measurements provides an optical frequency comb, and directs the comb through or at a sample. The optical frequency comb is generated by gain switching a laser diode constructed from Gallium Nitride and related materials. Various techniques are described for manipulating the comb source to achieve desired benefits for spectroscopy.

A laser device for generating an optical wave including at least two frequencies, such laser device including: a first element including a gain region, a second mirror, distinct from the first element, and arranged so as to form with a first mirror an optical cavity including the gain region; means for pumping the gain region so as to generate the optical wave; means for shaping the light intensity of the optical wave arranged for selecting at least two transverse modes of the optical wave; and means for shaping the longitudinal and/or transversal phase profile of the optical wave and arranged for adjusting at least two transverse modes of the optical wave.

A method for operating a power management device for controlling an operating device connected to a power supply network, in which the maximum demanded and/or provided output of the controlled operating device is at least 3 kW, is disclosed. An information data set is received which describes coupling information or a temporal progression of coupling information from a server device associated with a network provider of a power supply network, the coupling information describing a relationship between a device load of the operating device and a target variable to be optimized. A load profile is determined which describes a predicted temporal progression of the device load by optimizing the load profile with respect to the target variable. The load profile is provided to the server device, and the power management device may control the operating device according to a default value which is predetermined based on the load profile.

The invention relates to laser diode for generating laser radiation of at least two frequencies, comprising: a semiconductor body having a ridge waveguide; a DFB structure or DBR structure in the ridge waveguide; and a piezoelectric element for producing mechanical stress in the ridge waveguide, which piezoelectric element is arranged on the ridge waveguide. The invention further relates to a method for producing laser radiation of at least two frequencies by means of the laser diode.

A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.

An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.

The semiconductor laser device includes: an activation layer having at least one first quantum dot layer and at least one second quantum dot layer having a longer emission wavelength than the first quantum dot layer. The gain spectrum of the active layer has the maximum values at the first wavelength and the second wavelength longer than the first wavelength corresponding to the emission wavelength of the first quantum dot layer and the emission wavelength of the second quantum dot layer, respectively. The maximum value of the gain spectrum at the first wavelength is defined as the first maximum value, and the maximum value of the gain spectrum at the second wavelength is defined as the second maximum value. The first maximum value is larger than the second maximum value.

A laser light source includes an inner ring and an outer ring. The inner ring includes a semiconductor optical amplifier (SOA), a pair of optical circulators, a first optical filter, and a first optical waveguide connecting those in series. The outer ring includes the SOA, a pair of optical circulators, a second optical filter, an output port, and a second optical waveguide connecting those in series except for a portion shared. The inner ring operates as a gain-clamped SOA with a feedback control light defined by the first optical filter. The outer ring generates a laser output in a gain region of the clamped SOA, and with multiple peak wavelengths defined by the second optical filter, in a range from L Band to U band, applicable to WDM network systems. A WDM network system and a method of controlling the laser light source are also disclosed.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.