Disclosed is a Vernier effect DBR laser that has uniform laser injection current pumping along the length of the laser. The laser can include one or more tuning elements, separate from the laser injection element, and these tuning elements can be used to control the temperature or modal refractive index of one or more sections of the laser. The refractive indices of each diffraction grating can be directly controlled by temperature changes, electro optic effects, or other means through the one or more tuning elements. With direct control of the temperature and/or refractive indices of the diffraction gratings, the uniformly pumped Vernier effect DBR laser can be capable of a wider tuning range. Additionally, uniform pumping of the laser through a single electrode can reduce or eliminate interfacial reflections caused by, for example, gaps between metal contacts atop the laser ridge, which can minimize multi-mode operation and mode hopping.

A synthesized grating is provided comprising a substrate/layer, and a plurality of alternating aperiodic non-uniform low and high index profiles on a surface of the substrate/layer defining a transmission/reflection spectrum for one of either single or multi-frequency operation of said grating in an optical cavity. A method is also provided for designing the synthesized grating, comprising determining a grating structure of given profiles through analysis of an optimized weighted sum and mapping the grating profile to said surface with the plurality of alternating non-uniform low and high index profiles. A distributed feedback laser is also provided having top, bottom and two sides, comprising a top electrode, a cladding layer disposed below the top electrode a bottom electrode, a substrate disposed above the bottom electrode, one of either an active or passive waveguide layer, a synthesized aperiodic grating layer providing distributed minors, and wherein the waveguide layer and synthesized aperiodic grating layer are disposed between said the substrate and cladding layer and are separated by a spacer layer.

Disclosed is a laser device. The laser device includes a substrate, a pump light source which is disposed on the substrate and provided with a light emitting layer configured to generate pump light, and an upper waveguide which is disposed above the pump light source in a first direction and provided with an upper resonator configured to allow laser light to be generated and resonate by using the pump light.

A semiconductor laser may include an active region having a longitudinal axis, a rear facet end and a front facet end. The front facet end emitting an output beam of the semiconductor laser. The semiconductor laser may include a plurality of diffraction gratings positioned along the longitudinal axis of the active region. The plurality of diffraction gratings including a first diffraction grating positioned proximate the rear facet end of the active region and at least one additional diffraction grating positioned longitudinally between the first diffraction grating and the front facet. The first diffraction grating having a first kappa value and the at least one additional diffraction grating having at least a second kappa value, the first kappa value being greater than the second kappa value.

A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d.sub.1), in a second resonator section (23) with a second period (d.sub.2) and in a third resonator section (24) with a third period (d.sub.3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d.sub.2) and the third period (d.sub.3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator section (22) can be coupled out of the resonator in a light outcoupling direction parallel to a substrate surface (11) of the substrate (10). Methods for operating and producing the light emitter device (100) are also described.

A novel narrow linewidth laser device is disclosed that is formed monolithically on a semiconductor substrate, such as an indium phosphide substrate, that includes a continuous waveguide with a gain section and a grating section wherein a grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is formed on a second grating section of the waveguide on the opposite side of the gain section than the first grating section and wherein the reflectivity profile of the second grating overlaps at least a portion of the reflectivity profile of the first grating.

A light emitting device includes resonant parts constituted by a photonic crystal structure, and rows each of which includes the resonant parts arranged along a first direction, wherein light resonating in the resonant part resonates in a first resonant direction and a second resonant direction, the rows are arranged along a second direction, the rows include a first row, and a second row, a distance between the resonant part located furthest at one side of the first direction in the first row and the resonant part located furthest at the one side of the first direction in the second row is different from a distance between the resonant part located furthest at the one side of the first direction and the resonant part located furthest at another side of the first direction in the first row, the first and second resonant directions are along the first and second axes respectively, and in a plan view a length along the first direction of the resonant part and a length along the second direction of the resonant part are equal to each other.

A light emitting device includes resonant parts constituted by a photonic crystal structure, and rows each of which includes the resonant parts arranged along a first direction, wherein light resonating in the resonant part resonates in a first resonant direction and a second resonant direction, the rows are arranged along a second direction, the rows include a first row, and a second row, a distance between the resonant part located furthest at one side of the first direction in the first row and the resonant part located furthest at the one side of the first direction in the second row is different from a distance between the resonant part located furthest at the one side of the first direction and the resonant part located furthest at another side of the first direction in the first row, the first and second resonant directions are along the first and second axes respectively, and in a plan view a length along the first direction of the resonant part and a length along the second direction of the resonant part are equal to each other.

A distributed feedback laser, including: a ridge waveguide; two upper electrodes disposed on two sides of the ridge waveguide, respectively; two lower electrodes disposed on two sides of the upper electrodes, respectively; a substrate; a second waveguide cladding layer; an active layer; and a first waveguide cladding layer. The first waveguide cladding layer is n-doped and includes a conductive layer and a refractive layer disposed on the conductive layer. The refractive index of the refractive layer is greater than the refractive index of the active layer. The ridge waveguide includes a ridge region formed by a middle part of the refractive layer. The ridge region includes a surface provided with Bragg gratings. Two grooves are formed between the ridge waveguide and the upper electrodes. The conductive layer is connected to the upper electrodes. The second waveguide cladding layer includes one or more current restricted areas.

Disclosed is a laser device. The laser device includes a substrate, a pump light source which is disposed on the substrate and provided with a light emitting layer configured to generate pump light, and an upper waveguide which is disposed above the pump light source in a first direction and provided with an upper resonator configured to allow laser light to be generated and resonate by using the pump light.