The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

A Distributed Feedback Laser (DFB) mounted on a Silicon Photonic Integrated Circuit (Si PIC), the DFB having a longitudinal length which extends from a first end of the DFB laser to a second end of the DFB laser, the DFB laser comprising: an epi stack, the epi stack comprising: one or more active material layers; a layer comprising a partial grating, the partial grating extending from the second end of the DFB laser, only partially along the longitudinal length of the DFB laser such that it does not extend to the first end of the DFB laser; a highly reflective medium located at the first end of the DFB laser; and a back facet located at the second end of the DFB laser.

The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (m) to 100 m and may include a DFB grating with a first kappa in a range from 100 cm.sup.1 to 150 cm.sup.1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 m. The DBR region may include a DBR grating with a second kappa in a range from 150 cm.sup.1 to 200 cm.sup.1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

A mode locking semiconductor disk laser (SDL) comprising a resonator terminated by first and second mirrors and folded by a third mirror is presented. The third mirror includes a semiconductor disk laser (SDL) suitable for generating a resonator field having a predetermined central wavelength .sub.0, while the second mirror includes an intensity saturable mirror suitable for mode locking the resonator field at the predetermined wavelength. The central wavelength of the reflectivity profile of the first and or second mirrors is shifted to a wavelength shorter than the central wavelength .sub.0 to suppress gain at wavelengths longer than the central wavelength .sub.0. By mismatching the reflectivity profile of the first and or second mirrors to that of the desired output wavelength provides a stable mode locked laser with significantly reduced noise.

A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (m) to 100 m and may include a DFB grating with a first kappa in a range from 100 cm.sup.1 to 150 cm.sup.1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 m. The DBR region may include a DBR grating with a second kappa in a range from 150 cm.sup.1 to 200 cm.sup.1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

A laser includes a traveling wave laser cavity with an active section, a pulse stretcher, and a pulse compressor. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor is coupled to the waveguide after the active section.

Laser diode comprises an active layer; a waveguiding region at least partially surrounding the active layer; a rear facet; a front facet designed for outcoupling laser radiation, wherein the active layer extends at least partially along a first axis (X) between the rear facet and the front facet; and a grating operatively connected to the waveguiding region, wherein the grating comprises a plurality of bridges and trenches designed such that an average increase of a coupling parameter P for the plurality of trenches along the grating is non-zero, wherein the coupling parameter P of a trench is defined by the equation, wherein d.sub.res is a distance of the trench to the active layer, w is a width of the trench and n is the refractive index difference between a refractive index of the trench and a refractive index of a material surrounding the trench.

A distributed reflector (DR) laser may include a distributed feedback (DFB) region and a distributed Bragg reflector (DBR). The DFB region may have a length in a range from 30 micrometers (m) to 100 m and may include a DFB grating with a first kappa in a range from 100 cm.sup.1 to 150 cm.sup.1. The DBR region may be coupled end to end with the DFB region and may have a length in a range from 30-300 m. The DBR region may include a DBR grating with a second kappa in a range from 150 cm.sup.1 to 200 cm.sup.1. The DR laser may additionally include a lasing mode and a p-p resonance frequency. The lasing mode may be at a long wavelength side of a peak of a DBR reflection profile of the DBR region. The p-p resonance frequency may be less than or equal to 70 GHz.

A semiconductor light-emitting device includes an active layer including quantum dots, a diffraction grating, a low-reflectance film disposed at a light-emitting end of the active layer, and a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film.