The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

A laser includes an active region surrounded by first and second waveguide layers. Two or more mask openings are formed within a dielectric layer on a surface parallel to the active region. A refractive grating is formed on the dielectric mask openings and includes three-dimensional grating features spaced apart in the light-propagation direction of the laser. The refractive grating provides modulation of a real part of the effective refractive index of the laser and modulation of the imaginary part is provided by modulation of the current flow through the mask openings.

An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

A monolithic integrated semiconductor random laser composed of a gain region and random feedback region, comprising: a substrate, a lower confinement layer on the substrate, an active layer on the lower confinement layer, an upper confinement layer on the active layer, a strip-shaped waveguide layer longitudinally made in middle of the upper confinement layer, a P.sup.+ electrode layer divided into two segments by an isolation groove and made on the waveguide layer, and an N.sup.+ electrode layer on a back face of the lower confinement layer. The two segments of the P.sup.+ electrode layer correspond respectively to the gain region and the random feedback region. The random feedback region uses a doped waveguide to randomly feed back light emitted and amplified by the gain region. As a result, random laser is emitted. Frequency and intensity of laser emitted by semiconductor laser are random, and a monolithic integration structure is used, making semiconductor laser be light, small, stable in performance, and strong in integration.

The invention provides a continuous-wave pumped polymer laser and preparation method thereof, comprising: coating an organic polymer solution onto a substrate to form an polymer film, and applying a template having a distributed feedback structure to the polymer film, or coating an organic polymer solution onto a substrate having a distributed feedback structure to form an polymer film, and applying a plate to the polymer film; heating the substrate to reach above the phase transition temperature of the organic polymer, and applying a pressure to the template or plate for 1-100 min; and cooling the substrate to reach below the phase transition temperature of the organic polymer, and removing the template or plate from the organic polymer. The method of the invention is simple, the organic polymer molecular chain and supramolecular structure are oriented to have long range order, and the obtained laser can use continuous-wave pumping.

The embodiments herein describe a single-frequency laser source (e.g., a distributed feedback (DFB) laser or distributed Bragg reflector (DBR) laser) that includes a feedback grating or mirror that extends along a waveguide. The grating may be disposed over a portion of the waveguide in an optical gain region in the laser source. Instead of the waveguide or cavity being linear, the laser includes a U-turn region so that two ends of the waveguide terminate at the same facet. That facet is coated with an anti-reflective (AR) coating.

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus including one or more digital gratings each designed to deflect the light beam approximately ninety degrees. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane.

A structure of distributed feedback (DFB) laser includes a grating layer having a phase-shift grating structure and a gratingless area. In addition, both side-surfaces of the DFB laser are coated with anti-reflection coating to improve SMSR and to obtain good slope efficiency (SE). The grating layer is divided by the phase-shift grating structure in a horizontal direction into a first grating area and a second grating area adjacent to a laser-out surface of the DFB laser. The phase-shift grating structure provides a phase-difference distance, such that a shift of phase exists between the micro-grating structures located within the first grating area and the other micro-grating structures located within the second grating area. The gratingless area located within the second grating area contains no micro-grating structure, and moreover, the gratingless area will not change the phase of the micro-grating structures located within the second grating area.

Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of exciton density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

To provide a two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, in particular, optical output power. The two-dimensional photonic crystal surface emitting laser includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode.