The present invention discloses DFB laser manufacturing method based on dielectric laterally coupled grating with deterministic grating coupling coefficient, comprising: S1: performing photolithography on an epitaxial substrate of the laser without an etch-stop layer to obtain a photoresist pattern with a waveguide morphology in a predetermined geometric configuration, and then performing dry etching and removing the photoresist to obtain a substrate of a waveguide structure in the predetermined geometric configuration; S2: depositing a layer of an insulating film with a low refractive index on the substrate; S3: depositing a dielectric film with a high refractive index on the insulating film; S4: performing photolithography on the dielectric film to prepare a photoresist pattern as a laterally coupled grating morphology; S5: performing etching and removing the photoresist for the dielectric film on the photoresist pattern to prepare a dielectric laterally coupled grating for the laser, and to further prepare a DFB laser.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

There is provided a method for fabricating a corrugated buried heterostructure laser, including patterning a dielectric layer coating a substrate having a <0-11> direction to obtain a hollow corrugated structure. The hollow corrugated structure includes a central portion and regularly spaced-apart tabs laterally extending from the central portion and aligned with the <0-11> direction. The method also includes, in a single metal organic chemical vapour deposition run, forming an active region in the hollow corrugated structure to obtain the corrugated buried heterostructure laser. The single run combines selective area growth, p-dopant diffusion and etching techniques. There is also provided a corrugated buried heterostructure laser including a substrate having a <0-11> direction, a corrugated structure defined in the substrate and including a central portion and regularly spaced-apart tabs laterally extending from the central portion and aligned with the <0-11> direction, and an active region grown in the corrugated structure.

A recording head includes an external cavity laser with an externally mounted part having an active region. The external cavity laser also includes a channel waveguide that delivers light towards a media-facing surface. A near-field transducer functions as a reflector, either alone or in combination with a Bragg grating in the channel waveguide. A reflective back facet of the externally mounted part and the reflector define a resonator of the external cavity laser.

An optical semiconductor device includes a multi-quantum well layer including well layers and barrier layers alternately overlapping with each other, an optical confinement layer, and a guide layer interposed between the multi-quantum well layer and the optical confinement layer. Each barrier layer is an undoped layer and an outermost layer is one of the barrier layers. The optical confinement layer has a refractive index that is greater than that of the outermost layer and a band gap that is smaller than that of the outermost layer. The guide layer includes a first adjacent layer in contact with the outermost layer and the guide layer is thinner than the optical confinement layer. Each of the optical confinement layer and the guide layer is an n-type semiconductor layer. The first adjacent layer of the guide layer has a band gap that is larger than that of the optical confinement layer.

A quantum dot comb laser, is provided that comprises a first waveguide having a first width; and a second waveguide running above the first waveguide that includes: a quantum dot layer; a first region of a second width less than the first width; a second region connected to the first region and comprising a reflective grating; and a third region connected at a first end to the second region and at a second end to an output surface wherein the third region tapers from the second width at the first end to a third width, less than the second width, at the second end.

A surface-emitting laser, which is a ridge waveguide structure, including: a substrate, a first cladding layer, an active layer, a conductive layer, a second cladding layer; the Bragg gratings is etched on the surface of the ridge waveguide; the two upper electrodes are disposed on both sides of the ridge waveguide; two grooves are formed between the ridge waveguide and each of the two upper electrodes; the first waveguide cladding layer includes one or more current confinement regions; or a buried tunnel junction is formed in the second cladding layer for limiting current. The Bragg gratings comprise two first-order gratings and one second-order grating placed between two first-order gratings.

An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.

A semiconductor laser, an optical transmitter component, an optical line terminal, and an optical network unit. The semiconductor laser includes a substrate, a lower waveguide layer, a lower confining layer, a central layer, an upper confining layer, a grating layer, an upper waveguide layer, and an electrode layer that are sequentially formed on the substrate. The upper confining layer, the central layer, and the lower confining layer in a filtering region form a core layer of the filtering region. The grating layer in the filtering region includes a slanted grating. Thus, a modulation chirp and dispersion of a transmitted optical pulse can be reduced.

Single-mode distributed-feedback (DFB) lasers including single mode DFB waveguides with tapered grating structures are provided herein. Tapered grating structures provide for single mode DFB waveguides with predictable single mode operation. Uniform grating structures may provide for single mode operation, however DFB waveguides implementing uniform grating structures may operate at one of two single modes. Advantageously, DFB waveguides with tapered gratings operate with a spectrally narrow single mode at the same predictable single mode for all DFB waveguides with substantially identical specifications. Such predictability may lead to increased yield during manufacture of DFB waveguides with tapered gratings.