A direct modulation laser includes a distributed feedback type laser active region and an optical feedback region optically connected to one end of the laser active region in a waveguide direction. The direct modulation laser performs laser oscillation by using photon-photon resonance (PPR) that occurs depending on a frequency difference between a frequency of light generated (oscillated) in the laser active region and a frequency of an FP mode in the optical feedback region.

The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures to increase the average output power typically limed by Catastrophic Optical Damage (COD) at the laser facet or by intensity related effects. This potentially allows the overall laser cavity length to be shortened for a given output power level to stabilize frequency locking with internal or external gratings to improve single frequency operation.

The present disclosure relates to index guided semiconductor laser devices supporting wide single lateral mode operation for high power operation. A narrow channel ridge waveguide structure is presented which devices can be configured as single lateral multi-spectral high power semiconductor lasers, single frequency lasers, gain chips and semiconductor amplifiers. More specifically it relates to a means for increasing the lateral mode size over that of conventional index guided structures to increase the average output power typically limed by Catastrophic Optical Damage (COD) at the laser facet or by intensity related effects. This potentially allows the overall laser cavity length to be shortened for a given output power level to stabilize frequency locking with internal or external gratings to improve single frequency operation.

A laser device for use with a display including a plurality of pixels is disclosed. The laser device includes a gain section and a modulator. The gain section is electrically coupled with a first current or voltage source. The gain section is configured to selectively amplify an optical power of light reflecting within the gain section based on a first drive current or voltage supplied from the first current or voltage source to the gain section. The modulator is optically coupled with the gain section. The modulator is electrically coupled with a second current or voltage source. The modulator is configured to selectively attenuate or amplify an optical power of light received from the gain section based on a second drive current or voltage supplied from the second current or voltage source to the modulator. Light emitted from the modulator is provided to the display.

A controller stabilizes a distributed feedback plus reflection (DFB+R) laser, which has a back facet, a DFB section, a passive section, and a front facet with a low reflective element. An etalon filter is formed by a portion of the DFB section, the passive section, and the low reflective element. Control circuitry directly modulates the DFB section with a modulation signal and biases the passive section with a bias signal. In operation, a lasing mode of the DFB section is aligned to a long wavelength edge of one of the periodic peaks of a reflection profile of the etalon filter. Meanwhile, photodiodes are arranged to monitor the output power emitted from the laser's front and back facets. The control circuitry monitors a ratio of the detected output power and adjusts the bias based on the monitored ratio.

A controller stabilizes a distributed feedback plus reflection (DFB+R) laser, which has a back facet, a DFB section, a passive section, and a front facet with a low reflective element. An etalon filter is formed by a portion of the DFB section, the passive section, and the low reflective element. Control circuitry directly modulates the DFB section with a modulation signal and biases the passive section with a bias signal. In operation, a lasing mode of the DFB section is aligned to a long wavelength edge of one of the periodic peaks of a reflection profile of the etalon filter. Meanwhile, photodiodes are arranged to monitor the output power emitted from the laser's front and back facets. The control circuitry monitors a ratio of the detected output power and adjusts the bias based on the monitored ratio.

A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

A method or apparatus for narrowing the linewidth of a single mode laser is provided. The linewidth of a single mode laser is narrowed by injecting an optical feedback simultaneously into the first laser cavity mirror and the second laser cavity mirror of the single mode laser.

A method or apparatus for narrowing the linewidth of a single mode laser is provided. The linewidth of a single mode laser is narrowed by injecting an optical feedback simultaneously into the first laser cavity mirror and the second laser cavity mirror of the single mode laser.