A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1×10.sup.18/cm.sup.3 of n-type impurity.

An on-chip ultra-narrow linewidth laser and a method for obtaining a single-longitudinal mode ultra-narrow linewidth optical signal are provided in the present invention. The on-chip ultra-narrow linewidth laser includes a laser generating gain unit for generating a broad-spectrum initial optical signal and performing wavelength filtering on the generated optical signal, and also includes a distributed scattering feedback unit for performing linewidth compression on the optical signal; the laser generating gain unit is connected with the distributed scattering feedback unit, so that the optical signal generated by the laser generating gain unit is subjected to wavelength filtering and then output to the light guide component of the distributed scattering feedback unit to scatter to form an optical signal with a narrower linewidth to achieve linewidth compression, and the optical signal returning along the original path and fed back to the optical signal of the laser generating gain unit is subjected to gain amplification and wavelength filtering once again, repeating until achieving a steady state so as to obtain a single-longitudinal mode ultra-narrow linewidth optical signal. The laser can obtain a steady single-longitudinal mode ultra-narrow linewidth optical signal, and is simple in structure and small in volume.

In various embodiments, laser resonators include enclosed cooling manifolds defining protrusions each configured to conduct heat-exchange fluid to a beam emitter in the resonator. Installation of such cooling manifolds may be facilitated via use of a rigid installation tool functioning as a mechanical reference, prior to installation of the beam emitters and sealing of the beam emitters to the cooling manifold.

Photonic chip includes an external cavity (EC) optical circuit to provide wavelength-selective optical feedback to a length of active optical fiber. Light generated in the active optical fiber may be coupled from the EC circuit to a light processing circuit of the photonic chip, such as an optical modulator or an optical mixer. The EC circuits may include single-frequency and multi-frequency optical filters, which may include ring resonators, dual-ring resonators, and optical modulators to support multi-frequency lasers. The EC circuits may further include pump combiners and optical isolators.

A system including an optical transceiver, including a first portion of a laser cavity operable to output optical energy; and an optical modulator operable to modulate the optical energy output by the laser; and a temperature-controlled optical gain subassembly optically coupled to the optical transceiver, the optical gain subassembly including a plurality of semiconductor optical amplifiers (SOAs), wherein one SOA of the plurality of SOAs is operable to amplify the optical energy inside a laser cavity.

There is provided assemblies for combining a group of laser sources into a combined laser beam. There is further provided a blue diode laser array that combines the laser beams from an assembly of blue laser diodes. There are provided laser processing operations and applications using the combined blue laser beams from the laser diode arrays and modules.

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than −140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

An apparatus and methods for high-speed non-linear spectrally encoded multi-photon imaging that are particularly suited for use in two photon fluorescence and fluorescence lifetime imaging. The system is capable of optical image compression and scale invariant digital zoom. A wavelength agile laser with digitally synthesized electro-optic modulation in a master oscillator-power amplifier configuration is combined with spectral encoding to eliminate the speed limitations of inertial scanning. The technique for fast two photon fluorescent imaging with simultaneous lifetime imaging independently detects the location, amplitude and lifetime of fluorescent emission by synthesizing a sequential excitation beam via digital electro-optic modulation of a quasi-CW swept source followed by time encoded detection. For fluorescent imaging, spectral and temporal mappings are employed separately, with quasi-CW spectral encoding used for pumping and time encoding for constructing the image at fluorescence wavelength.

A light ranging system including a housing; a shaft defining an axis of rotation; a first circuit board assembly disposed within and coupled to the housing in a fixed relationship such that the first circuit board assembly is aligned along a first plane perpendicular to the axis of rotation, the first circuit board assembly including a plurality of first circuit elements disposed on a first circuit board; a second circuit board assembly spaced apart from the first circuit board assembly within the housing in a second plane parallel to the first plane and rotationally coupled to the shaft such that the second circuit board assembly rotates about the axis of rotation, the second circuit board assembly including a plurality of second circuit elements disposed on a second circuit board and aligned with and configured to function in wireless cooperation with at least one of the first plurality of circuit elements; and a light ranging device electrically connected to and coupled to rotate with the second circuit board assembly, the light ranging device configured to transmit light pulses to objects in a surrounding environment, to detect reflected portions of the light pulses that are reflected from the objects in the surrounding environment, and to compute ranging data based on the reflected portion of the light pulses.