A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220 C., and having an average thermal conductivity of at least 50 W/m.Math.K.

A semiconductor laser element includes a semiconductor stack with a ridge, a first electrode layer, a current injection prevention layer, and a second electrode layer. The semiconductor stack has an emission surface and a reflection surface. The first electrode layer extends in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack. The current injection prevention layer partially covers the first electrode layer, and has one or more island portions. Each of the island portions is disposed in a center region of the ridge in plan view. The second electrode layer is disposed on the current injection prevention layer, and partially in contact with the first electrode layer.

A semiconductor laser element includes: a semiconductor stack with a ridge, the semiconductor stack having an emission surface and a reflection surface; a first electrode layer extending in the lengthwise direction and disposed on the ridge in contact with the semiconductor stack; a current injection prevention layer covering at least a part of an upper surface from side surfaces of the first electrode layer, and being in contact with the first electrode layer at 18 to 80% of a contact surface area between the first electrode layer and the semiconductor stack; and a second electrode layer disposed on the current injection prevention layer, and being in contact with a part of the first electrode layer, edges of the second electrode layer being disposed closer to the emission surface and the reflection surface than edges of the first electrode layer, respectively.

A semiconductor laser including current block layers disposed between a p-type clad layer and a p-type light guide layer and a current confinement region which is a region between the current block layers is configured as follows. A width of an opening portion of an insulating layer is made narrow above a wide portion of the current confinement region in which the wide portion, a tapered portion, a narrow portion, a tapered portion and the wide portion are disposed in this order between an incidence side (HR side) and an emission side (AR side), and both ends of the wide portion are covered by an insulating layer. According to such a configuration, it is possible to suppress generation of super luminescence in the wide portion, and it is thus possible to achieve improvement in beam quality and higher output of the beam.

A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220 C., and having an average thermal conductivity of at least 50 W/m.Math.K.

The present invention proposes an O-band silicon-based high-speed semiconductor laser diode for optical communication and its manufacturing method, by using different buffer layers to form the growth surface of InP material with low dislocation density; NInAlGaAs is used instead of conventional NInAlAs electron-blocking layer in the epi-structure to reduce the barrier for electrons to enter the quantum wells from N-type and lower the threshold; a superlattice structure quantum barrier is used instead of a single layer barrier structure to improve the transport of heavy holes in the quantum wells; and the material structure is adjusted to achieve a reliable O-band high direct modulation speed semiconductor laser diode for optical communication on silicon substrate.

The present invention relates to a diode laser with a current block and, in particular, to a diode laser with a modified p-n-p or n-p-n structure as a current block for reducing the tunneling probability. A diode laser according to the invention comprises an active layer and a layered current block formed outside the active layer, wherein the current block is made of a material doped in opposition to its surroundings for a spatially selective current injection of the active layer between an n-substrate and a p-contact; wherein the current block is separated from adjacent layers via an intrinsic outer layer.

Disclosed in the present invention are a laser chip and a preparation method therefor. Said method comprises: providing a laser epitaxial structure, the laser epitaxial structure comprising an active layer, and a cladding layer and a contact layer which are sequentially stacked on the active layer; covering a first mask layer on the contact layer, and a photolithograph step is performed on the first mask layer to form a first window region; performing primary etching on the contact layer by means of the first window region, so as to form a second window region corresponding to the first window region and exposing the cladding layer; performing zinc diffusion on the cladding layer and the active layer by means of the first window region and the second window region; removing the first mask layer; covering a second mask layer on the contact layer, and a photolithograph step is performed on the second mask layer to form a third window region, the projection of the third window region on the contact layer being located at the periphery of the second window region; and performing secondary etching on the contact layer by means of the third window region, so as to enlarge the second window region to correspond to the third window region. The described method can effectively increase a catastrophic optical mirror damage threshold.

Described herein are examples of improved semiconductor lasers having improved facet reliability for operation at high power and high current without significant change in device performance. The semiconductor laser may include a first semiconductor layer, an active layer, a second semiconductor layer sequentially adjacent to each other and arranged on a substrate, and a contact layer. In one example, the improved semiconductor laser may have a conductive contact less than the length of the semiconductor laser cavity and/or a dielectric layer arranged on at least one of the end portions of the contact layer.

A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.