A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

A Vertical Cavity Surface Emitting Laser VCSEL, includes an optical resonator with a first reflector, a second reflector, and an active region for laser emission arranged between the first reflector and the second reflector and remaining regions outside of the active region, and an electrical contact arrangement configured to provide an electrical drive current to electrically pump the optical resonator. The optical resonator further comprises a loss layer introducing optical and/or electrical losses to increase wavelength shift of the laser emission when varying the drive current. If the loss layer is an optical loss layer, the optical losses introduced by the loss layer are higher than the sum of the optical losses in the remaining regions. If the loss layer is an electrical loss layer, the electrical losses introduced by the loss layer are higher by a factor of at least 5 than the electrical losses in the remaining regions.

The invention relates to a laser light source (10), comprising an arrangement (120) of surface-emitting semiconductor lasers (1251, 1252, . . . 125n) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser (100) which emits radiation (110) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current.

A layered pulse generator for a vertical-cavity surface-emitting laser (“VCSEL”) driver is disclosed consisting of three elements: a low-speed pulse generator, a high-speed pulse generator, and a pulse generator selector, all of which are on-chip with the VCSEL driver. By providing these elements on-chip, overall system power and complexity are reduced while allowing for significantly higher pulse train frequencies compared with known systems. The high-speed pulse generator is capable of generating pulses faster and with higher resolution than that of the low-speed pulse generator. The high-speed pulse generator uses multiple clock outputs, phase shifted, and synthesized into a single pulse waveform capable of wide-ranging frequencies, duty cycles and pulse counts.

A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device that includes an anode, a cathode, and one or more curved apertures located in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges crossing the curved aperture that allow current to flow inside the curved aperture, in which when a current signal is applied to the VCSEL, current flow between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

A MEMS tunable VCSEL includes a membrane device having a mirror and a distal-side electrostatic cavity for displacing the mirror to increase a size of an optical cavity. A VCSEL device includes an active region for amplifying light. Then, one or more proximal-side electrostatic cavities are defined between the VCSEL device and the membrane device and used to displace the mirror to decrease a size of an optical cavity.

Illumination modules are operable, in some implementations, to project a homogenous diffuse illumination onto a scene. Some implementations allow different subsets of light emitting elements to be addressed independently so that they can be turned on (or off) at different times, which can facilitate multi-mode operation.