In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

A Light Detection and Ranging (LIDAR) apparatus includes one or more optical elements configured to direct incident light in one or more directions, and a detector array including a plurality of detector pixels configured to output detection signals responsive to light provided thereto by the one or more optical elements. The light includes scattered light that is redirected relative to the one or more directions. A circuit is configured to receive the detection signals and generate corrected image data based on the detection signals and an expected spread function for the light. Related devices and methods of operation are also discussed.

A Light Detection and Ranging (LIDAR) apparatus includes one or more optical elements configured to direct incident light in one or more directions, and a detector array including a plurality of detector pixels configured to output detection signals responsive to light provided thereto by the one or more optical elements. The light includes scattered light that is redirected relative to the one or more directions. A circuit is configured to receive the detection signals and generate corrected image data based on the detection signals and an expected spread function for the light. Related devices and methods of operation are also discussed.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that is provided on plural wires connected to the light source and holds the light diffusing member.

A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

A light-emitting device includes a laser unit; and a first capacitive element and a second capacitive element that supply a driving electric current to the laser unit; wherein the first capacitive element has smaller equivalent series inductance than the second capacitive element, and the second capacitive element has a larger capacity and a smaller mount area than the first capacitive element.