A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×10.sup.18 atom/cm.sup.3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×10.sup.18 atom/cm.sup.3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×10.sup.17 atom/cm.sup.3.

A photonic-crystal surface-emitting laser element includes: a first semiconductor layer formed by embedding a photonic crystal layer that includes air holes arranged with two-dimensional periodicity in a formation region in a plane parallel to the photonic crystal layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a mesa portion with a mesa shape formed at a surface of the second semiconductor layer, wherein the mesa portion is located inside the formation region of the air holes when viewed in a direction perpendicular to the photonic crystal layer.

Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a light-emitting structure layer with a light-emitting layer, and a second multilayer film reflecting mirror. The second multilayer film reflecting mirror constitutes a resonator between the first and second multilayer film reflecting mirrors. The second multilayer film reflecting mirror includes a first multilayer film, an intermediate film, and a second multilayer film. The first and second multilayer films have low refractive index films and high refractive index films that are alternately stacked. The intermediate film covers an upper surface of the first multilayer film and film has a translucency to a light emitted from the light-emitting layer. The second multilayer film partially covers an upper surface of the intermediate film. The intermediate film has a film thickness based on ½ of a wavelength inside the intermediate film of light emitted from the light-emitting layer.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.

A nitride light emitter includes: a nitride semiconductor light-emitting element including an Al.sub.xGa.sub.1-xN substrate (0≤x≤1) and a multilayer structure above the Al.sub.xGa.sub.1-xN substrate; and a submount substrate on which the nitride semiconductor light-emitting element is mounted. The multilayer structure includes a first clad layer of a first conductivity type, a first light guide layer, a quantum-well active layer, a second light guide layer, and a second clad layer of a second conductivity type which are stacked sequentially from the Al.sub.xGa.sub.1-xN substrate. The multilayer structure and submount substrate are opposed to each other. The submount substrate comprises diamond. The nitride semiconductor light-emitting element has a concave warp on a surface closer to the Al.sub.xGa.sub.1-xN substrate.

Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.