A broad area semiconductor diode laser device includes a multiple flared oscillator waveguide including a plurality of component flared oscillator waveguides, each component flared oscillator waveguide including a multimode high reflector facet, a partial reflector facet spaced apart from the high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1, and wherein the component flared oscillator waveguides of the multiple flared oscillator waveguide are arranged in a row such that portions of the flared current injection regions of adjacently situated component flared oscillator waveguides overlap each other or are in proximity to each other on the order of the wavelength of light emitted by the component flared oscillator waveguides.

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

A semiconductor vertical resonant cavity light source includes an upper and lower mirror that define a vertical resonant cavity. An active region is within the cavity for light generation between the upper and lower mirror. At least one cavity spacer region is between the active region and the upper mirror or lower mirror. The cavity includes an inner mode confinement region and an outer current blocking region. An index guide in the inner mode confinement region is between the cavity spacer region and the upper or lower mirror. The index guide and outer current blocking region each include a lower and upper epitaxial material layer thereon with an epitaxial interface region in between. At least a top surface of the lower material layer includes aluminum in the interface region throughout a full area of an active part of the vertical light source.

An edge-emitting laser having a small vertical emitting angle includes an upper cladding layer, a lower cladding layer and an active region layer sandwiched between the upper and lower cladding layers. By embedding a passive waveguide layer within the lower cladding to layer, an extended lower cladding layer is formed between the passive waveguide layer and the active region layer. In addition, the refractive index (referred as n-value) of the passive waveguide layer is larger than the n-value of the extended lower cladding layer. The passive waveguide layer with a larger n-value would guide the light field to extend downward. The extended lower cladding layer can separate the passive waveguide layer and the active region layer and thus expand the near-field distribution of laser light field in the resonant cavity, so as to obtain a smaller vertical emitting angle in the far-field laser light field.

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

A semiconductor laser arrangement and a projector are disclosed. In an embodiment the semiconductor laser arrangement includes at least two electrically pumped active zones, each active zone configured to emit laser radiation of a different emission wavelength and a semiconductor-based waveguide structure, wherein the active zones are electrically independently operable of one another, wherein the active zones optically follow directly one another along a beam direction and are arranged in a descending manner with regard to their emission wavelengths, wherein at least in a region of a last active zone along the beam direction, a laser radiation of all active zones jointly runs through the waveguide structure, wherein at least the last active zone comprises a plurality of waveguides which are stacked one above the other and are oriented parallel to one another, wherein one of the waveguides is configured for the radiation emitted by the last active zone.

A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer is disposed between the electrode pad layer and the light emitting layer. The transparent conductive layer is disposed between the electrode pad layer and the first semiconductor layer. The first semiconductor layer has a ridged structure on one side away from the light emitting layer. The electrode pad layer has at least one empty area, and an orthogonal projection of the at least one empty area along a direction perpendicular to the light emitting layer is overlapped with at least a portion of an orthogonal projection of the ridged structure along the direction.

The present invention relates to an edge-emitting laser diode which has a semiconductor heterostructure consisting of at least one active layer or layer sequence (4) between two wave-guiding semiconductor layers or layer sequences(3, 5), which extend between a rear (9) and a front facet (10) of the laser diode. Between the rear (9) and the front facet (10), the two wave-guiding semiconductor layers or layer sequences (3, 5) each have one or more modified portions (14), in which vertical leakage currents from the active layer or layer sequence (4) are reduced or suppressed by a design of the two wave-guiding semiconductor layers or layer sequences (3, 5) that is modified in comparison with the remaining portions. The modified portions (14) are arranged in positions in which undesired excessive temperature increases would occur if the laser diode were operated without said reduction or suppression of the vertical leakage currents. The resulting increase in the COD threshold increases the achievable optical output performance and the service life of the laser diode.

A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.