III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

A laser diode vertical epitaxial structure, comprising a transverse waveguide comprising an active layer between an n-type semiconductor layer and a p-type semiconductor layer wherein the transverse waveguide is bounded by a lower index n-cladding layer on an n-side of the transverse waveguide and a lower index p-cladding layer on a p-side of the transverse waveguide, a lateral waveguide that is orthogonal to the transverse waveguide, wherein the lateral waveguide is bounded in a longitudinal direction at a first end by a facet coated with a high reflector (HR) coating and at a second end by a facet coated with a partial reflector (PR) coating and a higher order mode suppression layer (HOMSL) disposed adjacent to at least one lateral side of the lateral waveguide and that extends in a longitudinal direction.

Provided is a photonic crystal laser device including a lower electrode layer on a top surface or bottom surface of a substrate, a guide layer on the lower electrode layer, an upper electrode layer on the guide layer, a lower clad layer between the lower electrode layer and the guide layer, and an upper clad layer between the guide layer and the upper electrode layer. The guide layer includes an active layer therein. A crystal hole is provided that penetrates the upper clad layer in a vertical direction and extends toward the guide layer. A lower end of the crystal hole is defined to be at a height higher than or at the same height as a top surface of the active layer.

A device and a method for aligning a laser unit to a waveguide unit. The method may include (a) placing the laser unit in a tested position in which the laser unit faces the waveguide unit;(b) supplying light, via a coupler of the waveguide unit, to an alignment waveguide of the waveguide unit; (c) receiving light emitted from the alignment waveguide; wherein the light was emitted as result of the supplying of the light; (d) determining whether the light emitted from the alignment comprises a spectral signature associated with an alignment unit of the laser unit; and (e) estimating whether the laser unit is aligned to the waveguide unit based on the determining of step (d).

An emissive Solid State Imager (SSI) comprised of a spatial array of digitally addressable multicolor micro pixels. The imager efficiently produces white light by means of a photonic layer excited by a nanophosphors nanoparticle structure in a pixel element comprising an optical confinement cavity which may include a micro lens array for directional modulation of the emitted light or an RGB filter for color output. The light generated is emitted via a plurality of vertical optical waveguides that extract and collimate the light.

Semiconductor laser with mirror facet protection against degradation including a modified segment near the exit window that has a double waveguide with a reduced confinement factor compared with the confinement factor of the double waveguide of the main laser segment, such that the radiation at the exit facet in the modified double waveguide is pushed away from the active region, less radiation is absorbed at the facet and less heat is produced by nonradiative recombination at the exit facet, while the field distribution of the two double waveguides have a good overlap and low transfer losses due to the use of waveguide type structures with an active waveguide and a passive trapping waveguide.

According to the present invention, in a time wavelength division multiplexing-passive optical network (TWDM-PON) such as the next generation passive optical network 2 (NG-PON2) requiring a burst mode operation, in a process of manufacturing a semiconductor laser requiring selection of a very narrow wavelength, two laser waveguides having different oscillation wavelengths are formed in one laser diode chip, thereby making it possible to improve a wavelength yield of the chip. In addition, when any one laser waveguide participates in communication, a current applied to a waveguide laser that does not participate in the communication is modulated and applied to the waveguide laser, with respect to a wavelength change generated by a change in a current applied to a burst mode operation waveguide laser participating in the communication, to stabilize a wavelength of laser light oscillated from the laser waveguide participating in the communication, thereby enabling burst mode communication at a dense wavelength division multiplexing (DWDM) level.

A laser structure comprising a first photonic crystal surface emitting laser (PCSEL), a second PCSEL, and a coupling region that extends between the first PCSEL and the second PCSEL along a longitudinal axis and that is electrically controllable so as to be capable of coherently coupling the first PCSEL to the second PCSEL. Each PCSEL include an active layer, a photonic crystal, and a two-dimensional periodic array distributed in an array plane parallel to the longitudinal axis within the photonic crystal where the two-dimensional periodic array is formed of regions having a refractive index that is different to the surrounding photonic crystal.

A semiconductor vertical light source includes an upper mirror and a lower mirror. An active region is between the upper and lower mirror. The light source includes an inner mode confinement region and outer current blocking region. The outer current blocking region includes a common epitaxial layer that includes an epitaxially regrown interface which is between the active region and upper mirror, and a conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors is between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer.