A semiconductor optical device includes: a substrate expanding while intersecting with a first direction; a plurality of waveguide structures each of which includes a first cladding layer, a core layer, and a second cladding layer that are layered in the first direction, the plurality of waveguide structures extending in a second direction that intersects with the first direction and guiding lights in the second direction or opposite direction to the second direction, and being disposed away from each other in a third direction that intersects with the first direction and the second direction; and a first electrode disposed on an opposite side of the substrate with respect to the waveguide structures, and including a first portion and a second portion having a thickness thicker than a thickness of the first portion in the first direction.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

A high-reliability low-defect semiconductor light-emitting device and a method for manufacturing same. The high-reliability low-defect semiconductor light-emitting device includes: a semiconductor substrate layer; an active layer arranged on the semiconductor substrate layer; a doped semiconductor contact layer arranged on a side of the active layer away from the semiconductor substrate layer, where the doped semiconductor contact layer includes a first area and an edge area surrounding the first area; a protection layer arranged on a side of the edge area of the doped semiconductor contact layer away from the active layer; and a front electrode layer, arranged on a side of the first area away from the active layer, where an upper surface of the front electrode layer in the first area is lower than an upper surface of the protection layer. The semiconductor light-emitting device has both high reliability and reduced process control costs.

A semiconductor laser element includes an n-side semiconductor layer, an active layer and a p-side semiconductor layer. The p-side semiconductor layer includes, in order from the active layer, a first p-side composition gradient layer made of undoped In.sub.xGa.sub.1-xN and having an In composition ratio x decreasing in a range of 0 to less than 1 with distance from the active layer, an intermediate layer made of undoped Al.sub.zGa.sub.1-zN, and having an Al composition ratio z in a range of more than 0, a second p-side composition gradient layer made of undoped Al.sub.yGa.sub.1-yN, and having an Al composition ratio y increasing in a range of more than z to less than 1 with distance from the active layer, one or more p-type semiconductor layers containing a p-type impurity, and an electron barrier layer having a band gap energy larger than the second p-side composition gradient layer and containing a p-type impurity.

Some implementations described herein include a semiconductor laser having a distribution of a coupling coefficient. The semiconductor laser includes a substrate, and a semiconductor multilayer. The semiconductor multilayer includes an active layer, a grating layer, and an optical confinement adjustment layer which is flat. The semiconductor multilayer forms a first region and a second region. The optical confinement adjustment layer includes a high refractive index region, and a low refractive index region having a refractive index lower than a refractive index of the high refractive index region. The high refractive index region is arranged in any one of the first region or the second region and the low refractive index region is arranged in another one of the first region or the second region so that a first coupling coefficient of the first region becomes larger than a second coupling coefficient of the second region.

A semiconductor optical integrated device of the present disclosure includes: a substrate; a first EA modulator section formed on the substrate and comprising at least an n-type first semiconductor layer, a first modulation layer, and a p-type first semiconductor layer; and a second EA modulator section formed on the substrate and comprising at least an n-type second semiconductor layer, a second modulation layer having a width smaller than a width of the first modulation layer, and a p-type second semiconductor layer electrically connected to the n-type first semiconductor layer.