A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

First and second waveguide structures are coupled to a waveguide coupling structure, the first waveguide structure comprising a first guiding core structure formed on a first cladding structure, and a second cladding structure formed on the first guiding core structure. The first and second waveguide structures have respective guiding ridges. The second waveguide structure comprises a second guiding core structure formed on a third cladding structure, and a fourth cladding structure formed on the second guiding core structure. The waveguide coupling structure comprises a transition structure, a multimode interference structure between the transition structure and the second waveguide structure, and an electrode over at least a portion of the guiding ridge within the second cladding structure and over at least a portion of the transition structure.

A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl.sub.4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.

A front facet of the semiconductor laser device includes a resonator facet portion containing an end of an active layer, and a protruding portion which protrudes beyond the resonator facet portion in a resonator length direction by a predetermined protrusion amount and has a stepped bottom surface portion. The resonator facet portion and the stepped bottom surface portion are connected to each other to form a corner portion. The distance from a thickness center position of the active layer to the stepped bottom surface portion is defined by a bottom surface portion depth. The bottom surface portion depth is set to be equal to a predetermined specific depth or deeper than the specific depth.

An optical semiconductor integrated element comprises a laser section and a photodetector section which are arranged on the same semiconductor substrate, the laser section and the photodetector section each have a light confining layer which confines light, a cladding layer, and a contact layer formed of an InGaAs layer or an InGaAsP layer, the light confining layer of the laser section is an active layer, the contact layer of the photodetector section is a light absorption layer, each cladding layer is a ridge structure having a shape in which a width at a side of the light confining layer is narrower than a width at a side of the contact layer in a cross-section which is perpendicular to the optical axis, and on a side surface of the light confining layer, the cladding layer and the contact layer, a semiconductor embedded layer is not provided.

A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

First and second waveguide structures are coupled to a waveguide coupling structure, the first waveguide structure comprising a first guiding core structure formed on a first cladding structure, and a second cladding structure formed on the first guiding core structure. The first and second waveguide structures have respective guiding ridges. The second waveguide structure comprises a second guiding core structure formed on a third cladding structure, and a fourth cladding structure formed on the second guiding core structure. The waveguide coupling structure comprises a transition structure, a multimode interference structure between the transition structure and the second waveguide structure, and an electrode over at least a portion of the guiding ridge within the second cladding structure and over at least a portion of the transition structure.

A method of manufacturing a III-V based optoelectronic device on a silicon-on-insulator wafer. The silicon-on-insulator wafer comprises a silicon device layer, a substrate, and an insulator layer between the substrate and silicon device layer. The method includes the steps of: providing a device coupon, the device coupon being formed of a plurality of III-V based layers; providing the silicon-on-insulator wafer, the wafer including a cavity with a bonding region; transfer printing the device coupon into the cavity, and bonding a layer of the device coupon to the bonding region, such that a channel is left around one or more lateral sides of the device coupon; filling the channel with a bridge-waveguide material; and performing one or more etching steps on the device coupon, silicon-on-insulator wafer, and/or channel.