An optoelectronic semiconductor device is disclosed wherein the device is a vertical-cavity surface-emitting laser or a photodiode containing a section, the top part of which is electrically isolated from the rest of the device. The electric isolation can be realized by etching a set of holes and selective oxidation of AlGaAs layer or layers such that the oxide forms a continuous layer or layers everywhere beneath the top surface of this section. Alternatively, a device can be grown epitaxially on a semi-insulating substrate, and a round trench around a section of the device can be etched down to the semi-insulating substrate thus isolating this section electrically from the rest of the device. Then if top contact pads are deposited on top of the electrically isolated section, the pads have a low capacitance, and a pad capacitance below two hundred femto-Farads, and the total capacitance of the device below three hundred femto-Farads can be reached.

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.

A semiconductor laser includes a semiconductor layer including end faces and at least one of the end faces is configured as a light emission end face. The semiconductor layer includes a waveguide and a light window structure region. The waveguide has a first width and is extended between the end faces. The light window structure region includes an opening having a second width greater than the first width arranged along the waveguide and is formed continuously or intermittently from one to another of the end faces.

A method for manufacturing a semiconductor light-emitting device includes: forming a plurality of guide grooves so as to be depressed from a surface of a semiconductor structure layer toward a semiconductor substrate and to align and extend along a direction perpendicular to an extending direction of a plurality of line electrodes; forming, in each of the plurality of guide grooves, a scribe groove so as to be depressed from a bottom surface of the guide groove toward the semiconductor substrate and to extend along an extending direction of the guide groove; and dividing a semiconductor wafer along the plurality of guide grooves. The guide groove and the scribe groove are formed to have end shapes in such a manner that inner walls thereof project toward each other in the extending direction of the scribe groove.

A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.

A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.

A semiconductor laser device includes a substrate including a main surface, a semiconductor laser element including a resonator extending along a first direction, and a plurality of first wire groups and a plurality of second wire groups arranged along the first direction. Each first wire group includes a first wire bonded to a first bonding region of a top surface of the semiconductor laser element and a first mark portion, and a first mark portion formed on the main surface. Each second wire group includes a second wire bonded to a second bonding region of the main surface, and a second mark portion formed on the main surface. In a top view of the main surface, the first wire is disposed at a position overlapping the first mark portion, and the second wire is disposed at a position overlapping the second mark portion.