Some embodiments of the invention may relate to a rangefinder, in particular for a laser scanner, laser tracker, profiler, theodolite, or a total station. In a special embodiment of the invention, the light source of the rangefinderprovided for the emission of pulsed light signalsis configured here as an optical fiber amplifier (e.g. an EDFA, i.e. erbium-doped fiber amplifier) which is optically pumped by a superluminescent diode (SLD) operated in a pulsed manner.

A device including a non-polarization material includes a number of layers. A first layer of silicon (100) defines a U-shaped groove having a bottom portion (100) and silicon sidewalls (111) at an angle to the bottom portion (100). A second layer of a patterned dielectric on top of the silicon (100) defines vertical sidewalls of the U-shaped groove. A third layer of a buffer covers the first layer and the second layer. A fourth layer of gallium nitride is deposited on the buffer within the U-shaped groove, the fourth layer including cubic gallium nitride (c-GaN) formed at merged growth fronts of hexagonal gallium nitride (h-GaN) that extend from the silicon sidewalls (111), wherein a deposition thickness (h) of the gallium nitride above the first layer of silicon (100) is such that the c-GaN completely covers the h-GaN between the vertical sidewalls.

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

An optical device includes a silicon waveguide core having a tapered portion having a sectional size that decreases toward a terminal end portion thereof, a dielectric waveguide core contiguous to the silicon waveguide core while covering at least the tapered portion, the dielectric waveguide core having a refractive index lower than that of the silicon waveguide core and configuring a single-mode waveguide, and a diffraction grating provided at the single-mode waveguide and configuring a distributed Bragg reflection mirror.

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.