A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (Al.sub.xGa.sub.1-x).sub.0.5In.sub.0.5P, the first guide layer consists of (Al.sub.yGa.sub.1-y).sub.0.5In.sub.0.5P, and the second conductivity-type cladding layer consists of (Al.sub.zGa.sub.1-z).sub.0.5In.sub.0.5P, where x, y, and z each denote an Al composition ratio, 0<x−y<z−y is satisfied, and D/L>0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

A semiconductor laser element that includes a semiconductor layer including a waveguide formed in an intra-layer direction of the semiconductor layer and a window region formed in a front-side end face of the waveguide, has a current-laser optical output characteristic in which, at an operating temperature of 25° C.±3° C., a laser optical output has a maximum value at a first driving current value and the laser optical output is at most 20% of the maximum value at a second driving current value greater than the first driving current value, and is not damaged at the second driving current value.

A semiconductor laser device lases in a multiple transverse mode and includes a stacked structure where a first conductivity-side semiconductor layer, an active layer, and a second conductivity-side semiconductor layer are stacked above a substrate. The second conductivity-side semiconductor layer includes a current block layer having an opening that delimits a current injection region. Side faces as a pair are formed in portions of the stacked structure that range from part of the first conductivity-side semiconductor layer to the second conductivity-side semiconductor layer. The active layer has a second width greater than a first width of the opening. The side faces in at least part of the first conductivity-side semiconductor layer are inclined to the substrate. A maximum intensity position in a light distribution of light guided in the stacked structure, in a direction of the normal to the substrate, is within the first conductivity-side semiconductor layer.