An edge-emitting GaAs-based semiconductor laser uses a tunnel junction in combination with an inverted p-n junction to address oxidation problems associated with the use of a high aluminum content p-type cladding arrangement. In particular, a tunnel junction is formed on an n-type GaAs substrate, with p-type cladding and waveguiding layers formed over the tunnel junction. N-type waveguiding and cladding layers are thereafter grown on top of the active region. Since the p-type layers are positioned below the active region and not exposed to air during processing, a relative high aluminum content may be used, which improves the thermal and electrical properties of the device. Since the n-type material does not require a high aluminum content, it may be further processed to form a ridge structure without introducing any substantial oxidation of the structure.

A light emitting device includes: a substrate including a main surface; a first projection positioned on the main surface, the first projection including an upper surface and first and second lateral surfaces, wherein the first lateral surface of the first projection comprises a first reflective part, and the second lateral surface of the first projection comprises a second reflective part; a first laser element positioned on the main surface at a first reflective part side with respect to the first projection, the first laser element being configured to irradiate first laser light to the first reflective part; a second laser element positioned on the main surface at a second reflective part side with respect to the first projection, the second laser element being configured to irradiate second laser light to the second reflective part; and a first optical member bonded to the upper surface of the first projection.

A light emitting device is provided that makes it possible to reduce absorption of light by an electrode. The light emitting device includes a substrate, and a laminated structure provided to the substrate, wherein the laminated structure includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the active layer, a recessed part is disposed at an opposite side to the substrate side of the laminated structure, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a depth of the recessed part is no larger than a distance between a surface at an opposite side to the substrate side of the laminated structure and the active layer, and an electrode is disposed at an opposite side to the substrate side of the laminated structure.

Photonic devices having Al.sub.1-xSc.sub.xN and Al.sub.yGa.sub.1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x≤0.45 and 0≤y≤1.

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

A semiconductor stack includes a first-conductivity-type layer, a quantum well structure, and a second-conductivity-type layer. The first-conductivity-type layer, the quantum well structure, and the second-conductivity-type layer are stacked in this order. The quantum well structure includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. In the first semiconductor layer and the third semiconductor layer, compositions of the first semiconductor layer and the third semiconductor layer are changed such that a bandgap decreases toward the second semiconductor layer. Transition of an electron is possible between a conduction band of each of the first semiconductor layer and the third semiconductor layer and a valence band of the second semiconductor layer.

A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

Techniques for efficient alignment of a semiconductor laser in a Photonic Integrated Circuit (PIC) are disclosed. In some embodiments, a photonic integrated circuit (PIC) may include a semiconductor laser that includes a laser mating surface, and a substrate that includes a substrate mating surface. A shape of the laser mating surface and a shape of the substrate mating surface may be configured to align the semiconductor laser with the substrate in three dimensions.

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer.