A structure having first and second layers is disposed on a substrate. The second layer is disposed on the first layer, is compressively strained, and comprises the alloy including germanium and tin. The structure comprises first and second members spaced a distance from each other along a direction, a strip located between the first and second members and extending along an axis intersecting the direction, and arms connecting the first and second members to a first end of the strip. The first and second members, the strip and the arms comprise respective portions of the first and second layers. A portion of the first layer at the strip and arms is removed such that the strip and arms become suspended and the arms remain anchored to the first layer via the first and second members. Tensile strain is induced in the alloy via the arms. The alloy may perform lasing.

Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value x.sub.pi1 of proportion of tin less than x.sub.ps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x.sub.ps1, and vertical structures having an average value x.sub.ps2 of proportion of tin greater than x.sub.ps1, thus forming regions for emitting or for receiving infrared radiation.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.

In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 510.sup.18 cm.sup.3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 210.sup.19 cm.sup.3.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

A semiconductor light emitter device, comprising a substrate, an active layer made of Germanium, which is configured to emit light under application of an operating voltage to the semiconductor light emitter device, wherein a gap is arranged on the substrate, which extends between two bridgeposts laterally spaced from each other, the active layer is arranged on the bridgeposts and bridges the gap, and wherein the semiconductor light emitter device comprises a stressor layer, which induces a tensile strain in the active layer above the gap.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.