Patent classifications
H01S5/3401
Widely-tunable harmonic frequency comb in a quantum cascade laser
A wireless communication device includes a quantum cascade laser (QCL) configured to generate a terahertz (THz) or microwave carrier signal. The QCL includes a laser waveguide, a laser optical gain medium incorporated in the laser waveguide, and at least one electrode. An antenna may be integrated with the electrode. The device may be a transmitter, the electrode configured to receive an input baseband signal, the QCL configured to couple the THz or microwave carrier signal and the input baseband signal into a THz or microwave communication signal, and the antenna configured to transmit the THz or microwave communication signal. The device may be a receiver, the antenna configured to receive a THz or microwave communication signal, and the QCL configured to de-couple the THz or microwave communication signal from the THz or microwave carrier signal into an output baseband signal.
Quantum cascade laser with monolithically integrated passive waveguide
A photonic integrated circuit device includes a passive waveguide section formed over a substrate, a quantum cascade laser (QCL) gain section formed over the substrate and adjacent to the passive waveguide section, and a taper section disposed between and in contact with each of the passive waveguide section and the QCL gain section. In some embodiments, the passive waveguide section includes a passive waveguide core layer disposed between a first cladding layer and a second cladding layer. In some examples, the QCL gain section includes a QCL active region disposed between a first confinement layer and a second confinement layer, where the QCL active region has a lower index of refraction than each of the first and second confinement layers. In some embodiments, the taper section is configured to optically couple the QCL gain section to the passive waveguide section.
QCL WITH BRANCH STRUCTURE AND RELATED METHODS
A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.
SURFACE-EMITTING QUANTUM CASCADE LASER
According to one embodiment, a surface-emitting quantum cascade laser includes a substrate; a mesa portion of a semiconductor stacked body located on the substrate, and a reflective film located at a sidewall of the mesa portion. The mesa portion includes a light-emitting layer emitting light due to an intersubband transition of a carrier, and a photonic crystal layer including a two-dimensional diffraction grating.
COMPACT LASER SCALPEL AND METHOD FOR PREFERENTIAL ABLATION OF TUMOR TISSUE
An apparatus and method of treatment of an animal using the apparatus are disclosed. The apparatus includes a scalpel, a laser included in the scalpel, and a visible light source included in the scalpel. The visible light source provides a visible targeting beam. The method of treatment includes activating a visible targeting beam in a laser scalpel. The visible targeting beam has an illumination intensity. The method further includes illuminating a tumor that includes cancerous cells and non-cancerous cells with the visible targeting beam, activating an invisible mid-infrared laser included in the scalpel to produce a laser spot at the tumor, and ablating the cancerous cells while leaving the non-cancerous cells substantially undamaged.
SINGLE MODE SEMICONDUCTOR LASER WITH PHASE CONTROL
The invention relates to a method for producing a semiconductor laser comprising the method steps: generating a lateral structure layer, at least in the material abrasion areas, a basic selection of the laser modes amplified or amplifiable through stimulated emission taking place via the lateral structure layer; and generating an optical element for defining the phasing of the amplified or amplifiable laser modes, the optical element being generated in such a manner that it has a distance d to an end of the lateral structure layer in the longitudinal direction of the waveguide ridge, distance d fulfilling the condition
being a natural number (m∈) and λ.sub.eff being the effective wavelength in the material.
LASER MODULE
A laser module including a quantum cascade laser that includes a substrate having a main surface, a first clad layer provided on the main surface, an active layer provided on the first clad layer, and a second clad layer provided on the active layer, and a lens that has a lens plane disposed at a position facing the end surface of the active layer. An end surface of the active layer constitutes a resonator that causes light of a first frequency and light of a second frequency to oscillate, and the active layer is configured to generate a terahertz wave of a differential frequency between the first frequency and the second frequency. The substrate is in direct contact or indirect contact with the lens plane, and the end surface of the active layer is inclined with respect to a portion facing the end surface in the lens plane.
LASER COMPRISING A DISTRIBUTED BRAGG MIRROR AND PRODUCTION METHOD THEREOF
A laser includes a distributed Bragg minor and is configured to emit monochromatic light radiation along a longitudinal direction. The laser has layers, stacked along a first transverse direction normal to the longitudinal direction and made of III-V materials, including an active region configured to emit the radiation. The mirror is formed by periodic lateral corrugations which extend mainly along the longitudinal direction and having a dimension along a second transverse direction normal to the longitudinal direction. The lateral corrugations of the Bragg minor extend from a top surface of the waveguide pattern along the first transverse direction on a height strictly less than the depth, at which the active region is located starting from the top surface, such that a portion of lateral flanks of the waveguide is free of any lateral corrugations at the active region.
LASER COMPRISING A DISTRIBUTED BRAGG MIRROR AND PRODUCTION METHOD
A laser is provided, including: a distributed Bragg mirror; a waveguide, the laser to emit light radiation along a longitudinal direction x, and the waveguide formed at least in part in a stack of layers made of III-V materials including at least one active region to emit the light radiation, the mirror including lateral corrugations distributed periodically along the direction x in a period Λ, the corrugations being carried by at least a lateral plane xz defined by the direction x and a first transverse direction z normal to the direction x, the corrugations having a dimension d along a second transverse direction y normal to the direction x; and a top electrode arranged on the waveguide along the direction z, the corrugations being partly located at lateral flanks of the top electrode, extending parallel to the plane xz, and extending only on the lateral flanks of the top electrode.
OPTICAL KIT AND OPTICAL DEVICE
An optical kit includes a base including a main surface; and a holding unit provided on the main surface to hold an optical system. The holding unit includes a lens holding unit that holds a lens, a reflector holding unit that holds a corner reflector, a first aperture member holding unit that holds a first aperture member, a second aperture member holding unit that holds a second aperture member, and a third aperture member holding unit that holds a third aperture member. The reflector holding unit includes a first mechanism that holds an entirety of the corner reflector so as to be rotatable along the main surface, and a second mechanism configured to adjust an optical axis of a diffracted light in each of a reflective diffraction grating and a mirror.