A vehicle component, and a method and tool for forming the component are provided. First and second tools with first and second surfaces, respectively, are provided. The first tool is translated along a first axis towards the second tool such that the first and second surfaces cooperate to define a mold cavity configured to form an accessory mount feature with an aperture. The second surface is configured to form an integrated rib extending outwardly from an upper surface of the mount feature to a planar bearing surface surrounding the aperture with the planar bearing surface oriented at an acute angle relative to the upper surface. The first axis is substantially parallel to the upper surface.

An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.

An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.

A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

A laser emitter is provided, including a substrate and a dielectric mask layer located proximate to and above the substrate in a thickness direction. The dielectric mask layer may have a plurality of trenches formed therein. The plurality of trenches may have a plurality of different respective widths. The laser emitter may further include a respective nanowire located within each trench of the plurality of trenches. Each nanowire may include a first semiconductor layer located above the substrate in the thickness direction. Each nanowire may further include a quantum well layer located proximate to and above the first semiconductor layer in the thickness direction. Each nanowire may further include a second semiconductor layer located proximate to and above the quantum well layer in the thickness direction.

In the light emitting device, each of columnar parts includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between a substrate and the light emitting layer, a laminated structure has a third semiconductor layer of the first conductivity type disposed between the substrate and the plurality of columnar parts, a first electrode is electrically connected to the first semiconductor layer via the third semiconductor layer, a contact hole is disposed in an insulating layer at a position overlapping the first electrode when viewed from a stacking direction of the first semiconductor layer and the light emitting layer, the first wiring layer is provided to the insulating layer, and the first wiring layer is electrically connected to the first electrode via the contact hole.

Ina light emitting device, a first diametrical size that is the largest size of a columnar part between a substrate side of a light emitting layer and an opposite side of the substrate, the columnar part has a size no larger than the first diametrical size in an area between the substrate side of the light emitting layer and the substrate side of a first semiconductor layer, the columnar part has a size smaller than the first diametrical size in the area between the substrate side of the light emitting layer and the substrate side of the first semiconductor layer, the columnar part has a size no larger than the first diametrical size in an area between the opposite side to the substrate of the light emitting layer, and an opposite side to the substrate of a second semiconductor layer, and the columnar part has a size smaller than the first diametrical size in the area between the opposite side to the substrate of the light emitting layer in the laminating direction, and the opposite side to the substrate of the second semiconductor layer.

A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion.

A light emitting apparatus according to an aspect of the present disclosure includes a substrate, a columnar section group including a plurality of columnar sections each having a laminated structure of a first semiconductor layer, a light emitting layer, and a second semiconductor layer, and an electrode via which electric current is injected into the plurality of columnar sections. The plurality of columnar sections include a plurality of first columnar sections and a plurality of second columnar sections disposed around the plurality of first columnar sections. The second columnar sections each have the shape of each of the first columnar sections except that part of the shape is missing. The second columnar sections are lower than the first columnar sections. The electrode is electrically insulated from the plurality of second columnar sections.