A core-shell nanowire laser structure comprises a substrate (12), an elongated support element (14) extending from the substrate, the support element having a first diameter, and an elongated body element (16) extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.

A two-dimensional material plasmonic laser (device) is provided with a surface plasmonic cavity and an atomically thin semiconductor monolayer gain medium disposed on the surface plasmonic cavity. Under optical pumping or electrical pumping, the surface plasmonic cavity provides a laser feedback mechanism by coupling electron-hole pairs confined in the atomically thin semiconductor monolayer gain medium and the surface plasmon modes in the dark-mode surface plasmonic cavity, and a laser light is emitted from the two-dimensional material plasmonic laser.

A two-dimensional material plasmonic laser (device) is provided with a surface plasmonic cavity and an atomically thin semiconductor monolayer gain medium disposed on the surface plasmonic cavity. Under optical pumping or electrical pumping, the surface plasmonic cavity provides a laser feedback mechanism by coupling electron-hole pairs confined in the atomically thin semiconductor monolayer gain medium and the surface plasmon modes in the dark-mode surface plasmonic cavity, and a laser light is emitted from the two-dimensional material plasmonic laser.

An illustrative method for transferring nanostructures is provided with the steps of: forming a two-dimensional material (2D material) on a first substrate; forming a plurality of nanostructures on the 2D material; bonding a surface of one or more of the plurality of nanostructures with a head or a second substrate, and/or shaking the one or more nanostructures with or without a fluid; and separating the one or more nanostructures from the 2D material.

Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.

A semiconductor optical device 1 includes an active layer 4 provided on a substrate 2, a clad layer 5 provided on the active layer 4, and a contact layer 7 provided on the clad layer 5. The contact layer 7 contains a first impurity and a second impurity different from the first impurity. A semiconductor light source includes the active layer 4 provided on the substrate 2, the clad layer 5 provided on the active layer 4, and the contact layer 7 provided on the clad layer 5. The contact layer 7 contains the first impurity and the second impurity different from the first impurity.

A nanowire can include a first semiconductor portion, a second portion including a quantum structure disposed on the first portion, and a second semiconductor portion disposed on the second portion opposite the first portion. The quantum structure can include one or more quantum core structures and a quantum core shell disposed about the one or more quantum core structures. The one or more quantum core structures can include one or more quantum disks, quantum arch-shaped forms, quantum wells, quantum dots within quantum wells or combinations thereof.

A semiconductor light-emitting device includes an active layer including quantum dots, a diffraction grating, a low-reflectance film disposed at a light-emitting end of the active layer, and a high-reflectance film disposed at another end of the active layer and having an optical reflectance higher than an optical reflectance of the low-reflectance film.

The present disclosure provides a backlight module, which includes at least one quantum wire unit. The at least one quantum wire unit is configured to have an effective wire width such that the at least one quantum wire unit is capable of converting electric energy to emit light of a selected wavelength. Each of quantum wire unit comprises a first electrode, disposed on a first side of a substrate layer; a first buffer layer, disposed on a second side of the substrate layer; an active layer, disposed over the first buffer layer; a second buffer layer, disposed over the active layer; and a second electrode disposed over the second buffer layer. Each quantum wire unit, along with the substrate layer, forms a quantum wire laser generator, which is configured such that the active layer emits light upon application of a voltage difference between the first electrode and the second electrode.

Photonic devices such as semiconductor lasers and photodetectors of various operating wavelengths are grown monolithically on a Silicon substrate, and formed of nanowire structures with quantum structures as active regions. A reduction of strain during fabrication results from the use of these nanowire structures, thereby allowing devices to operate for extended periods of time at elevated temperatures. Monolithic photonic devices and monolithic photonic integrated circuits formed on Silicon substrates are thus provided.