The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

The optical mode of a photonic device is coupled between a first region made of a semiconducting material, and a second region made of a dielectric material. Photons are generated within the first region, while the optical mode is predominantly stored within the second region. The thickness of the first region and its width are controlled to determine its effective refractive index, enabling control of the optical mode.

A highly integrated multi-channel optical transceiver module based on silicon photonic chip technology includes an integrated silicon photonic chip, an integrated circuit chip, and a printed circuit board assembly. The integrated silicon photonic chip and the integrated circuit chip are both integrated on silicon substrates and are furthered bonded on printed circuit board assembly. The integrated silicon photonic chip includes a silicon photonic transmitter chip and a silicon photonic receiver chip that both connected to optical fiber connectors through the optical fiber patch cord jumpers. The integrated circuit chip includes an integrated circuit transmitter chip that connected to the silicon photonic transmitter chip through a wire bonding, and an integrated circuit receiver chip that connected to the silicon photonic receiver chip through a wire bonding. The present invention provides a high-data-rate, low-power-consumption, and cost-effective solution for optical transceiver modules and active optical cables based on silicon photonic chip technology.

A highly integrated multi-channel optical transceiver module based on silicon photonic chip technology includes an integrated silicon photonic chip, an integrated circuit chip, and a printed circuit board assembly. The integrated silicon photonic chip and the integrated circuit chip are both integrated on silicon substrates and are furthered bonded on printed circuit board assembly. The integrated silicon photonic chip includes a silicon photonic transmitter chip and a silicon photonic receiver chip that both connected to optical fiber connectors through the optical fiber patch cord jumpers. The integrated circuit chip includes an integrated circuit transmitter chip that connected to the silicon photonic transmitter chip through a wire bonding, and an integrated circuit receiver chip that connected to the silicon photonic receiver chip through a wire bonding. The present invention provides a high-data-rate, low-power-consumption, and cost-effective solution for optical transceiver modules and active optical cables based on silicon photonic chip technology.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-Si.sub.1?xGe.sub.x compound material, said Hex-Si.sub.1?xGe.sub.x compound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-S.sub.1?xGe.sub.x compound material, said Hex-Si.sub.1?xGe.sub.x compound material having a direct band gap for absorbing light.

An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction includes a first semiconductor doped with one or more n-type primary dopant species and a second semiconductor doped with one or more p-type primary dopant species. The device also includes a first counterdoped component selected from a group consisting of the first semiconductor and the second semiconductor. The first counterdoped component is counterdoped with one or more counterdopant species that have a polarity opposite to the polarity of the primary dopant included in the first counterdoped component. Additionally, a level of the n-type primary dopant, p-type primary dopant, and the one or more counterdopant is selected to the counterdoped heterojunction provides amplification by a phonon assisted mechanism and the amplification has an onset voltage less than 1 V.