Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Provided is an electro-absorption modulator that includes a substrate, a mesa structure, a first conductivity type electrode, and a second conductivity type electrode. The first conductivity type electrode includes a mesa-top electrode, a pad electrode, and a lead-out wire electrode. The mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end. A connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the light output end side in a long-side direction of the mesa-top electrode. The connection position is a position that is less than 50% from the light output end side with respect to a length in the long-side direction of the mesa-top electrode.

Provided is an electro-absorption modulator that includes a substrate, a mesa structure, a first conductivity type electrode, and a second conductivity type electrode. The first conductivity type electrode includes a mesa-top electrode, a pad electrode, and a lead-out wire electrode. The mesa structure has a light input end, to which light is to be input from outside, and a light output end, which is on a side of the mesa structure that is opposite of the light input end. A connection position between a center position in a short-side direction of the lead-out wire electrode and the mesa-top electrode is closer to the light output end side in a long-side direction of the mesa-top electrode. The connection position is a position that is less than 50% from the light output end side with respect to a length in the long-side direction of the mesa-top electrode.

A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

A laminate (22) is formed on a semiconductor substrate (10). Two or more grooves (54) are formed in the laminate (22). A mesa (24) with two grooves among the two or more grooves (54) positioned on both sides is formed. An insulating resin film (30) is embedded into the two or more grooves (54). A first opening (32) is formed at the insulating resin film (30) embedded in one of the two or more grooves (54) and an electrode (46) extracted upward from a bottom surface (36) is formed. A first side surface (34) of the insulating resin film (30) is inclined in a forward tapered direction.

The semiconductor laser element includes: a substrate; a first semiconductor layer disposed above a main surface of the substrate; an active layer that is disposed above the first semiconductor layer and generates light; and a second semiconductor layer) disposed above the active layer. In a top view of a front-side end portion of the semiconductor laser element from which the light is emitted, an end surface of the second semiconductor layer includes an inclined portion with respect to an end surface of the first semiconductor layer.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.

A surface emission laser formed of a group III nitride semiconductor includes a first conductivity type first clad layer; a first conductivity type first guide layer on the first clad layer; a light-emitting layer on the first guide layer; a second guide layer on the light-emitting layer; and a second conductivity type second clad layer on the second guide layer. The first or second guide layer internally includes voids periodically arranged at square lattice positions with two axes perpendicular to one another as arrangement directions in a surface parallel to the guide layer. The voids have a polygonal prism structure or an oval columnar structure with a long axis and a short axis perpendicular to the long axis in the parallel surface, and the long axis is inclined with respect to one axis among the arrangement directions of the voids.

A Vertical Cavity Surface Emitting Laser (VCSEL) including a light emitting III-nitride active region including quantum wells (QWs), wherein each of the quantum wells have a thickness of more than 8 nm, a cavity length of at least 7 λ, or at least 20 λ, where lambda is a peak wavelength of the light emitted from the active region, layers with reduced surface roughness, a tunnel junction intracavity contact. The VCSEL is flip chip bonded using In—Au bonding. This is the first report of a VCSEL capable of continuous wave operation.