Provided are an addressable laser array device and an electronic apparatus including the addressable laser array device. The addressable laser array device includes a plurality of VCSELs, each including a distributed Bragg reflector (DBR), a nanostructure reflector including a plurality of nanostructures having a sub-wavelength dimension, and a gain layer disposed between the DBR and the nanostructure reflector; a plurality of first wiring patterns extending in a first direction and being electrically connected to the plurality of VCSELs, respectively; and a plurality of second wiring patterns extending in a second direction intersecting the first direction and being electrically connected to the plurality of VCSELs, respectively, wherein the plurality of VCSELs are disposed at intersections of the plurality of first wiring patterns and the plurality of second wiring patterns, and the addressable VCSEL array device is configured to selectively drive at least some of the plurality of VCSELs.

A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.

A method for fabricating an ellipsoidal or semi-ellipsoidal semiconductor structure includes steps of providing a semiconductor substrate and fabricating an ellipsoidal or semi-ellipsoidal cavity structure on the semiconductor substrate. The cavity structure encompasses a seed surface of the semiconductor substrate. The method includes a further step of growing the ellipsoidal or semi-ellipsoidal semiconductor structure within the ellipsoidal or semi-ellipsoidal cavity structure from the seed surface of the semiconductor substrate. Fabricating the cavity structure includes arranging a droplet comprising a sacrificial material on the semiconductor substrate, forming a layer of a coating material on the semiconductor substrate and the droplet, and selectively removing the sacrificial material of the droplet to expose the cavity structure.

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

A semiconductor device comprising a waveguide having a core, said core having inserted therein one or more layers of nanoemitters.

A light emitting device includes a unipolar light emitter structured from materials arranged to provide light emission via intersubband transitions of a single type of carrier in either of the conduction band or valence band integrated with a foreign surface.

A light emitting device includes a unipolar light emitter structured from materials arranged to provide light emission via intersubband transitions of a single type of carrier in either of the conduction band or valence band integrated with a foreign surface.

A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.