A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

An array type semiconductor laser device includes: a second electrode (p-electrode) disposed on another conductivity type semiconductor layer; a third electrode (n-electrode) disposed on a one conductivity type semiconductor layer and between a first electrode (p-electrode) and the second electrode; a fifth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and between the third electrode and the second electrode; a sixth electrode (n-electrode) disposed on the one conductivity type semiconductor layer and across from the fifth electrode; a first conductor (wire) that electrically connects the second electrode and the third electrode; and a second conductor (n-wiring) that electrically connects the fifth electrode and the sixth electrode.

A light source module includes a first semiconductor laser element hermetically sealed, a second semiconductor laser element hermetically sealed, and firth to fourth optical elements. A first laser beam prior to reaching the first optical element has divergence angle θfd1 in a direction along a second optical axis and divergence angle θsd1 in a direction along a third optical axis, and satisfy 90°>θfd1>θsd1>0°. Divergence angle θfd12 of a first laser beam in the direction along the second optical axis decreases from divergence angle θfd1, the first laser beam having exited the first optical element. A component of a first laser beam in the direction along the second optical axis is collimated, the first laser beam having exited the second optical element. The same applies to the second semiconductor laser element.

A light emitting device includes: at least one semiconductor laser element; and a light-transmissive member including: an upper surface, a lower surface, and a light-transmissive region through which laser light emitted from the at least one semiconductor laser element is transmitted from the lower surface to the upper surface, wherein: at least the light-transmissive region is made of sapphire, the light-transmissive member includes an incident surface on which the laser light is incident, the incident surface being an a-plane of the sapphire, and the light-transmissive member is oriented such that a polarization direction of the laser light incident on the incident surface is parallel or perpendicular to a c-axis of the sapphire in a top view.

A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

A semiconductor light emitting device includes a substrate and a semiconductor multilayer stacked on the substrate. The semiconductor multilayer includes an n-side clad layer stacked above the substrate, an active layer stacked above the n-side clad layer, and a p-side clad layer stacked above the active layer. The semiconductor multilayer includes a first plane perpendicular to a stacking direction in which the semiconductor multilayer is stacked, and a lattice constant inside the first plane is an anisotropy constant.

A laser chip is described which comprises a plurality of gain areas. Each gain area comprises a ridge waveguide and a wavelength locking element, where the wavelength locking element in a gain area defines the output wavelength characteristics of visible light emitted from that gain area and adjacent gain areas comprise different wavelength locking elements.

Implementing systems and methods for operating a LiDAR system. The methods comprise: supplying current from a laser diode bar driver of the LiDAR system to a light source of the LiDAR system; passing the current through a laser diode bar of the light source (the laser diode bar comprising a plurality of laser diodes electrically connected in series); emitting a light beam from the light source when current is passing through the plurality of laser diodes; and/or receiving light reflected off an object.

A multilaser arrangement includes: a housing including a base plate, a housing cap fastened on the base plate, and a transparent element, the base plate including a bottom face, the housing cap including an opening with the transparent element assigned to the opening for the passage of electromagnetic radiation; lasers, each being arranged inside the housing at a distance from the bottom face of the base plate, the housing cap including an upper wall and a side wall, which includes a lower edge and a surface, is formed integrally with the upper wall, and ends with the lower edge fastened on the base plate, the side wall having a first thickness and a second thickness, the first thickness being measured in a direction perpendicular to the surface, the second thickness being measured at the lower edge and being less than or equal to the first thickness.

An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.