Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.

A light emitting device includes first and second semiconductor laser elements and a collimate lens. The first semiconductor laser element irradiates a first light having a first peak wavelength in a visible range. The second semiconductor laser element irradiates a second light having a second peak wavelength in the visible range, which is different from the first peak wavelength. The collimate lens is arranged on paths of the first and second lights. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes. The second lens portion is connected to the first lens portion, and the first and second lens portions are different from each other in at least one of a shape of a light incident surface, a shape of a light extracting surface, and a height.

Methods and apparatus for spectral narrowing and wavelength stabilization of broad-area lasers, such as an apparatus including a broad-area laser source configured to emit light along an emission axis in an emission pattern extending along the emission axis, and a single-mode fiber Bragg grating, such as a single-mode core incorporating a fiber Bragg grating embedded in a core of a dual-clad fiber, the single-mode fiber Bragg grating configured to spectrally selectively reflect back light from a sub-aperture portion of the emitted light to the broad-area laser source. The single mode core having the FBG is off-axis in comparison to the central axis of the double-clad fiber and allows for frequency stabilization of the broad area laser diode output improving its performance as pump laser for a doped fiber amplifier.

Semiconductor lasers are arranged in a plurality of columns. The columns of the respective semiconductor lasers include semiconductor laser installed columns. Reflecting mirrors in the respective semiconductor laser installed columns reflect light in substantially the same axial direction as viewed from above, and constitute beam groups. The beam groups of the respective semiconductor laser installed columns are formed on both sides in a width direction of a housing. That is, the beam groups are configured for each of the semiconductor laser installed columns, and the respective beam groups are formed on mutually different axes as viewed from above.

This disclosure describes a red-green-blue (RGB) vertical-cavity surface-emitting laser (VCSEL) array. Each VCSEL in the VCSEL array has a grating, one or more active regions and two distributed Bragg reflectors. Each VCSEL corresponds to either red, green or blue wavelengths. The number of active regions in each VCSEL may be based on the color emitted.

A method of forming a build in a powder bed includes providing a first diode laser fiber array and a second diode laser fiber array, emitting a plurality of laser beams from selected fibers of the second diode laser fiber array onto the powder bed, corresponding to a pattern of a layer of the build, simultaneously melting powder in the powder bed corresponding to the pattern of the layer of the build, scanning a first diode laser fiber array along an outer boundary of the powder bed and emitting a plurality of laser beams from selected fibers of the first diode laser fiber array and simultaneously melting powder in the powder bed corresponding to the outer boundary of the layer of the build to contour the layer of the build. An apparatus for forming a build in a powder bed including a first diode laser fiber array and a second diode laser fiber array is also disclosed. The first diode laser fiber array configured to contour the layer of the build.

A light emitting device includes first and second semiconductor laser elements and a collimate lens. The first semiconductor laser element irradiates a first light having a first peak wavelength in a visible range. The second semiconductor laser element, irradiates a second light having a second peak wavelength in the visible range, which is different from the first peak wavelength. The collimate lens is arranged on paths of the first and second lights. The collimate lens has a plurality of lens portions including a first lens portion through which the first light passes, and a second lens portion through which the second light passes. The second lens portion is connected to the first lens portion, and the first and second lens portions are different from each other in at least one of a shape of a light incident surface, a shape of a light extracting surface, and a height.

A light emitting device includes: one or more semiconductor laser elements, each configured to emit laser light; one or more light-reflecting parts, each having a light-reflecting surface configured to reflect the laser light emitted from a corresponding one of the one or more semiconductor laser elements; and a fluorescent part having a light-receiving surface configured to be irradiated with the laser light reflected at the light-reflecting surface of each of the one or more light-reflecting parts; wherein an irradiated region is formed on the light-reflecting surface when the light-reflecting surface is irradiated with the laser light, the irradiated region including a first end and a second end opposite the first end; and wherein the light-reflecting surface of each of the one or more light-reflecting parts is arranged such that a portion of the laser light reflected at at least a first end of the irradiated region and a portion of the laser light reflected at a location other than the first end of the irradiated region are overlapped with each other on the light-receiving surface.

Semiconductor lasers are arranged in a plurality of columns. The columns of the respective semiconductor lasers include semiconductor laser installed columns. Reflecting mirrors in the respective semiconductor laser installed columns reflect light in substantially the same axial direction as viewed from above, and constitute beam groups. The beam groups of the respective semiconductor laser installed columns are formed on both sides in a width direction of a housing. That is, the beam groups are configured for each of the semiconductor laser installed columns, and the respective beam groups are formed on mutually different axes as viewed from above.

Methods and apparatus for spectral narrowing and wavelength stabilization of broad-area lasers, such as an apparatus including a broad-area laser source configured to emit light along an emission axis in an emission pattern extending along the emission axis, and a single-mode fiber Bragg grating, such as a single-mode core incorporating a fiber Bragg grating embedded in a core of a dual-clad fiber, the single-mode fiber Bragg grating configured to spectrally selectively reflect back light from a sub-aperture portion of the emitted light to the broad-area laser source. The single mode core having the FBG is off-axis in comparison to the central axis of the double-clad fiber and allows for frequency stabilization of the broad area laser diode output improving its performance as pump laser for a doped fibre amplifier.