According to various embodiments, a solid-state light detection and ranging (LiDAR) transmitter includes a tunable optical metasurface to selectively steer incident optical radiation long an azimuth axis. In some embodiments, different subsets of lasers in an array of lasers are activated to generate optical radiation for incidence on the metasurface at different angles of incidence on an elevation axis for unsteered deflection by the metasurface at corresponding angles of elevation. In some embodiments, a prism is positioned relative to the tunable optical metasurface to deflect the optical radiation from the optical assembly by the optical radiation source for incidence on the metasurface at an angle of incidence that is between the first steering angle and the second steering angle, such that the optical radiation incident on the metasurface and the steered output optical radiation from the metasurface spatially overlap within the prism.

In some implementations, an optical device includes a two-zone vertical cavity surface emitting laser (VCSEL) with a set of emission zones configured to emit structured light forming a set of dots; a single-element collimating lens aligned to the two-zone VCSEL; and a tiling diffractive optical element (DOE) aligned to the single-element collimating lens, wherein the tiling DOE comprises a set of tile segments aligned to the set of emission zones, and wherein a tile segment, of the set of tile segments, is configured to project, from the set of emission zones toward portions of a target, the structured light forming the set of dots.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a set of epitaxial layers disposed on the substrate layer. The VCSEL device may include an active VCSEL formed in the set of epitaxial layers, where the active VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be present in the active VCSEL. The VCSEL device may include at least one passive VCSEL formed in the set of epitaxial layers, where the passive VCSEL is configured such that electrical pumping that provides optical gain for lasing is to be absent in the at least one passive VCSEL. The at least one passive VCSEL may be positioned relative to the active VCSEL to cause coupling of one or more modes of the active VCSEL with one or more modes of the at least one passive VCSEL.

A decrease in image quality is suppressed. A solid-state imaging apparatus according to an embodiment includes: a photoelectric conversion unit (PD) including a material having a smaller band gap energy than silicon; and a circuit board joined to the photoelectric conversion unit, the circuit board including: a pixel signal generation circuit that generates a pixel signal having a voltage value corresponding to a charge generated in the photoelectric conversion unit; and a thermometer circuit that detects a temperature of the circuit board.

In some implementations, an optical assembly includes a substrate that includes a thermally conductive core, an IC driver chip that is disposed on a first surface of the substrate, and a VCSEL device that includes an electrically insulated surface that is disposed on the thermally conductive core of the substrate within a cavity formed in the second surface of the substrate. The VCSEL device includes a cathode contact disposed on a surface of the VCSEL device and an anode contact disposed on the surface of the VCSEL device. The VCSEL device includes a plurality of emitters and a microlens component that is disposed over the plurality of emitters on the surface of the VCSEL device.

A semiconductor laser includes a horizontal laser element including a first semiconductor layer arrangement having a first active zone for generating radiation. The horizontal laser element furthermore includes a first optical resonator extending in a direction parallel to a first main surface of the first semiconductor layer arrangement. Lateral boundaries of the first semiconductor layer arrangement run obliquely, such that electromagnetic radiation generated is reflectable in a direction of the first main surface of the first semiconductor layer arrangement. The semiconductor laser furthermore includes a vertical laser element having a second optical resonator extending in a direction perpendicular to the first main surface of the first semiconductor layer arrangement. The vertical laser element is arranged above the first semiconductor layer arrangement on the side of the first main surface in a beam path of electromagnetic radiation reflected at one of the lateral boundaries of the first semiconductor layer arrangement (112).

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.

The invention relates to a laser light source (10), comprising an arrangement (120) of surface-emitting semiconductor lasers (1251, 1252, . . . 125n) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser (100) which emits radiation (110) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current.

A laser source is presented a plurality of unit cells of a selected number of partially physically coupled lasing units arranged within a plane and configured to form a topological structure, wherein each of the lasing units is configured to emit radiation component substantially perpendicular to said plane, said plurality of the unit cells comprising at least a first sub-array of the unit cells located in a first region interfacing with a second region of a different type than said first region, thereby defining an arrangement of optically coupled lasing units along an interface region between the first and second adjacent regions, forming at least one topological state along a topological path within said interface region.