A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

A LIDAR transmitter system comprising an array of laser energy sources, each laser energy source comprising a corresponding photodetector. The laser energy sources are configured to emit laser energy towards a LIDAR target. Each respective photodetector is configured to detect the laser energy emitted by a corresponding energy source of the array.

Disclosed herein are single element dot pattern projectors with a meta-optics. The projectors include a laser light source and a metasurface chip integrated onto the laser light source. The metasurface chip includes metasurface elements spaced apart from the laser light source by a distance equal to the collimating function focal length of the metasurface chip. the laser light source produces light which is diffracted through the metasurface elements to produce a dot pattern. Projectors enabled by meta-optics lead to unique methods of integrating the meta-optic and unique functionality that can be added to the dot pattern.

A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise aim-type doped region and a p-type doped region and optionally an intrinsic region there between.

A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

A semiconductor device comprises a substrate and a plurality of emitters disposed on the substrate. The emitter may comprise: a first conductive reflection layer having a first reflectivity; an active layer disposed on the first conductive reflection layer; an aperture layer disposed on the active layer and comprising an aperture region and a blocking region surrounding the aperture region; and a second conductive reflection layer disposed on the aperture layer and having a second reflectivity smaller than the first reflectivity. A diameter-to-pitch ratio of the aperture region of the aperture layer is 1:3 to 1:5, wherein the pitch may be defined as the distance between centers of aperture regions of aperture layers of adjacent emitters.

A solid-state LIDAR system includes a plurality of lasers, each generating an optical beam having a FOV when energized. A plurality of detectors is positioned in an optical path of the optical beams generated by the plurality of lasers. A FOV of at least one of the plurality of optical beams generated by the plurality of lasers overlaps a FOV of at least two of the plurality of detectors. A controller is configured to generate bias signals at a plurality of laser control outputs that energize a selected group of the plurality of lasers in a predetermined time sequence and is configured to detect a predetermined sequence of detector signals generated by the plurality of detectors.

A semiconductor device comprising an array of vertical cavity surface emitting lasers (VCSELs). The semiconductor device includes a first VCSEL having a first active area, a second VCSEL having a second active area, and a bridge connecting the first VCSEL and the second VCSEL. The first active area of the first VCSEL and the second active area of the second VCSEL are arranged along a first crystal axis. The semiconductor device further includes a blocking structure arranged between the first VCSEL and the second VCSEL. the blocking structure is configured to block a propagation of a defect between the first VCSEL and the second VCSEL along the first crystal axis.

An infrared illuminator including an infrared emitter and an infrared window for transmitting infrared radiation from the infrared emitter to a field of illumination. The infrared window includes an electrochromic material for varying the transmittance of the infrared radiation through the infrared window in response to an applied electric field.