A power semiconductor waveguide optical amplifier (P-SWA) may include an amplifier waveguide with an invertible core formed from one or more undoped heterogeneous semiconductor layers and one or more cladding layers surrounding one or more sides of the invertible core formed as one or more undoped semiconductor layers. Pump light may be coupled into the amplifier waveguide to induce the population inversion in the invertible core. Signal light may further be coupled into the amplifier waveguide and may be amplified as it propagates through the amplifier waveguide. The signal light may then exit the amplifier waveguide as amplified signal light.

It is necessary to reduce the power consumption of a plurality of optical amplifiers when there is a difference in the required pumping power between the plurality of optical amplifiers; therefore, an optical amplifying apparatus according to an exemplary aspect of the invention includes a plurality of optical amplifying means for amplifying a plurality of optical signals, each of the plurality of optical amplifying means including a gain medium; a plurality of laser light generating means for generating a plurality of laser beams; at least one optical coupling means for coupling the plurality of laser beams variably in accordance with a coupling factor and outputting a plurality of excitation light beams, each of the plurality of excitation light beams exciting the gain medium; and controlling means for controlling the coupling factor and an output power of each of the plurality of laser light generating means.

An optical amplifier includes a polarization splitter, a polarization rotator, first and second optical couplers, and first and second semiconductor optical amplifying devices. The TE polarized wave of light split by the polarization splitter is input to a first input port of the first optical coupler. The TM polarized wave of the split light is converted into a TE polarized wave by the polarization rotator to be input to a second input port of the first optical coupler. First light and second light output from a first output port and a second output port of the first optical coupler are amplified by the first semiconductor optical amplifying device and the second semiconductor optical amplifying device to be input to a first input port and a second input port of the second optical coupler, respectively. Third light is output from an output port of the second optical coupler.

The present disclosure discloses a narrow-linewidth laser. The narrow-linewidth laser comprises a passive ring waveguide, a first passive input/output waveguide which is coupled with the passive ring waveguide, a gain wavelength-selection unit which is used for providing gain for the whole laser and is configured to be capable of selecting the light with a specific wavelength to be coupled into the passive ring waveguide, and a second passive input/output waveguide which is coupled with the passive ring waveguide in order to output lasing light from the laser. The narrow-linewidth semiconductor laser provided by the present disclosure has a simple structure and does not have butt-joint coupling loss between a gain region and a waveguide external cavity region. There is no a linewidth limitation caused by butt-coupling loss in such semiconductor lasers. Moreover, because of the integral formation semiconductor technique, the laser should have low cost, higher stability and reliability, and higher resistance to severe environment. Furthermore, based on a loss compensation structure, a ring external cavity of the laser can work in a critical coupling state under different coupling coefficients. Therefore, the laser with a narrow linewidth and a high side-mode suppression ratio should be achieved.

A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

Aspects of the present disclosure describe systems, methods and structures for providing semiconductor amplifiers exhibiting a low polarization-dependent gain.

Embodiments of the invention describe polarization insensitive optical devices utilizing polarization sensitive components. Light comprising at least one polarization state is received, and embodiments of the invention select a first optical path for light comprising a first polarization state or a second optical path for light comprising a second polarization state orthogonal to the first polarization state. The optical paths include components to at least amplify and/or modulate light comprising the first polarization state; the second optical path includes a polarization rotator to rotate light comprising the second polarization state to the first polarization state. Embodiments of the invention further describe optical devices including a polarization mode converter to convert light comprising a first and a second polarization state to light comprising different spatial modes of the first polarization state; light comprising the different spatial modes of the first polarization state is subsequently amplified and modulated.

A semiconductor optical amplifier includes: a substrate; a light source unit that is formed on the substrate; and an optical amplification unit that includes a conductive region extending, from the light source unit, in a predetermined direction along a surface of the substrate, and a nonconductive region around the conductive region. The optical amplification unit amplifies propagation light that propagates, from the light source unit, in the predetermined direction as slow light, and emits the propagation light that is amplified in an emission direction that intersects with the surface. The maximum optical power of the propagation light is larger than the maximum optical power in a vertical oscillation mode.

Embodiments of the invention describe polarization insensitive optical devices utilizing polarization sensitive components. Light comprising at least one polarization state is received, and embodiments of the invention select a first optical path for light comprising a first polarization state or a second optical path for light comprising a second polarization state orthogonal to the first polarization state. The optical paths include components to at least amplify and/or modulate light comprising the first polarization state; the second optical path includes a polarization rotator to rotate light comprising the second polarization state to the first polarization state. Embodiments of the invention further describe optical devices including a polarization mode converter to convert light comprising a first and a second polarization state to light comprising different spatial modes of the first polarization state; light comprising the different spatial modes of the first polarization state is subsequently amplified and modulated.

A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.