Patent classifications
H
ELECTRICITY
Load children
H02
GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Load children
H02H
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
Load children
7/00
Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
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H02H7/0833
for electric motors with control arrangements
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H02H7/0838
with H-bridge circuit
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H02H7/0838

Motor drive circuit, motor system and electric device
12381384 · 2025-08-05 · ·

The present disclosure provides a motor drive circuit. The motor drive circuit includes a first-phase half bridge circuit and a second-phase half bridge circuit. The first and second phase half bridge circuits include first-phase and second-phase high-side FETs and first-phase and second-phase low-side FETs. The first-phase and second-phase high-side FETs are configured to apply a first voltage to a first end. A second end of the first-phase and second-phase high-side FETs is connected to the first end. A second voltage lower than the first voltage is applied to the second end. The first-phase low-side FET or the second-phase high-side FET is disposed between the first-phase high-side FET and the second-phase low-side FET. The second-phase low-side FET or the first-phase high-side FET is disposed between the first-phase low-side FET and the second-phase high-side FET.

MOTOR DRIVE CIRCUIT, MOTOR SYSTEM AND ELECTRIC DEVICE
20250330010 · 2025-10-23 ·

The present disclosure provides a motor drive circuit. The motor drive circuit includes a first-phase half bridge circuit and a second-phase half bridge circuit. The first and second-phase half bridge circuits include first-phase and second-phase high-side FETs and first-phase and second-phase low-side FETs. The first-phase and second-phase high-side FETs are configured to apply a first voltage to a first end. A second end of the first-phase and second-phase high-side FETs is connected to the first end. A second voltage lower than the first voltage is applied to the second end. The first-phase low-side FET or the second-phase high-side FET is disposed between the first-phase high-side FET and the second-phase low-side FET. The second-phase low-side FET or the first-phase high-side FET is disposed between the first-phase low-side FET and the second-phase high-side FET.