An oscillator is provided with an oscillator circuit having tank circuit terminals for coupling to a tank circuit. A microelectromechanical system (MEMS) resonator serves as a tank circuit. The MEMS resonator is coupled to the oscillator circuit using a transformer with a primary coil coupled to the oscillator tank circuit terminals and a secondary coil coupled to the MEMS resonator terminals, wherein the transformer has a turns ratio of N:1 and N is greater than 1.

A multi-piece wiring substrate includes a matrix substrate provided with dividing grooves arranged along boundaries of wiring substrate regions in a first principal face and a second principal face, the dividing grooves including first dividing grooves, second dividing grooves, third dividing grooves, and fourth dividing grooves, depths of the first dividing grooves and depths of the second dividing grooves being set to be greater than depths of the third dividing grooves and depths of the fourth dividing grooves, first curved parts being provided so that the depths of the third dividing grooves gradually increase as going toward respective corners of the wiring substrate regions, and second curved parts being provided so that the depths of the fourth dividing grooves gradually increase as going toward the respective corners of the wiring substrate regions.

A clock circuit includes a voltage-controlled oscillator (VCO) having a control input and a first clock output. The clock circuit includes a frequency-locked loop (FLL) having an FLL input and a control output, the control output coupled to the control input. A microelectromechanical system (MEMS) resonator-based oscillator has a second clock output. A multiplexer has a first multiplexer input, a second multiplexer input, a selection input, and a multiplexer output. The first multiplexer input is coupled to the first clock output. The second multiplexer input is coupled to the second clock output. The multiplexer output is coupled to the FLL input.

A stacked-die oscillator package includes an oscillator circuit die having inner bond pads, and outer bond pads, and a bulk acoustic wave (BAW) resonator die having a piezoelectric transducer with a first and second BAW bond pad on a same side coupled to a top and bottom electrode layer across a piezoelectric layer. A first metal bump is on the first BAW bond pad and a second metal bump is on the second BAW bond pad flip chip bonded to the inner bond pads of the oscillator circuit die. A polymer material is in a portion of a gap between the BAW and oscillator circuit die.

An integrated circuit may include oscillator circuitry having a resonator formed from fin field-effect transistor (FinFET) devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. The resonator may be connected in a feedback loop within the oscillator circuitry. The oscillator circuitry may include an amplifier having an input coupled to the sense cells and an output coupled to the drive cells. The oscillator circuitry may also include a separate inductor and capacitor based oscillator, where the resonator serves as a separate output filter stage for the inductor and capacitor based oscillator.

A clock oscillator, a clock oscillator production method and use method, and a chip including the clock oscillator are provided. The clock oscillator includes a resonator, a shock-absorbing material layer, and a base, and at least a part of the shock-absorbing material layer is located between the resonator and the base. In the clock oscillator, the shock-absorbing material layer is added between the resonator and the base, and the shock-absorbing material layer can effectively prevent a mechanical wave from being conducted between the base and the resonator, so that the resonator is protected from external vibration. This can ensure, when there is external vibration, that an output frequency of the resonator is not deteriorated and improve shock absorption performance of the clock oscillator.

In one aspect, the disclosure relates to a super high frequency (SHF) or extremely high frequency (EHF) bulk acoustic resonator that includes a nanostructure, wherein the nanostructure includes a substrate, a three-dimensional structure disposed on the substrate, wherein the three-dimensional structure includes a planar structure including at least one nanocomponent and a matrix material contacting the nanocomponent on at least one side, the matrix material including an SiGe alloy or Ge. The disclosed bulk acoustic resonator operates at frequencies of from about 100 MHz to about 100 GHz, is capable of self-amplification upon application of direct current or voltage, and has a Q factor amplification exceeding 1. Also disclosed are methods for amplification of mechanical resonance in the disclosed bulk acoustic resonators and devices incorporating the bulk acoustic resonators.

An oscillation module includes an SAW filter, and a high-pass filter formed in an integrated circuit, the high-pass filter has a coil part, a capacitance part, and a first interconnection adapted to connect the coil part and the capacitance part to each other, and the capacitance part includes a capacitance array.

A vibrator device includes a base; and a vibrator element including a quartz crystal vibrator element attached to the base via a first metal bump, in which the first metal bump is disposed on a straight line inclined within a range of +55 to +65 or 65 to 55 with respect to an X axis of the quartz crystal constituting the quartz crystal vibrator element in plan view seen from a direction in which the base and the quartz crystal vibrator element are arranged.

A vibrator device includes a base; a circuit element attached to the base; a vibrator element attached to the circuit element; and a plurality of temperature sensors arranged in the circuit element, in which the circuit element includes a first connecting terminal connected to the base, a second connecting terminal connected to the vibrator element, and at least one circuit of an output buffer circuit, a power supply circuit, and a phase-locked loop circuit, and the shortest distance between each of the plurality of temperature sensors and the first connecting terminal or the second connecting terminal is shorter than the shortest distance between each of the temperature sensors and the at least one circuit.