An acoustic wave force field generator array that uses a plurality of synchronized oscillating emitters system that effectively blocks noise from passing through an acoustic barrier of wave/bubble pattern forms generated by the rapid oscillation of the integrated magnet and emitter system. The movement of the magnets also produces an EM field that generates a current to at least partially power the driver and speaker systems.

An electronic component housing package includes an insulating substrate having an upper surface including a mount for an electronic component, a frame-shaped metallized layer surrounding the mount on the upper surface of the insulating substrate, and a metal frame joined to the frame-shaped metallized layer with a brazing material. The frame-shaped metallized layer includes a first sloping portion sloping inwardly from an upper surface to an inner peripheral surface. The brazing material includes a fillet portion formed between an upper outer periphery of the frame-shaped metallized layer and the metal frame, and a filling portion formed between the first sloping portion and the metal frame.

A multi-piece wiring substrate includes a matrix substrate provided with dividing grooves arranged along boundaries of wiring substrate regions in a first principal face and a second principal face, the dividing grooves including first dividing grooves, second dividing grooves, third dividing grooves, and fourth dividing grooves, depths of the first dividing grooves and depths of the second dividing grooves being set to be greater than depths of the third dividing grooves and depths of the fourth dividing grooves, first curved parts being provided so that the depths of the third dividing grooves gradually increase as going toward respective corners of the wiring substrate regions, and second curved parts being provided so that the depths of the fourth dividing grooves gradually increase as going toward the respective corners of the wiring substrate regions.

A single frequency control device incorporating a high frequency resonator, a low frequency resonator and a temperature sensing element, the latter thermally coupled closely to the said resonators to facilitate temperature sensing with higher resolution and accuracy. Additional benefits offered by the structure include smaller size and lower cost.

A circuit device includes: a first terminal and a second terminal coupled to a resonator; a third terminal; a fourth terminal; a first switch provided on a signal path between the first terminal and the third terminal; a second switch provided on a signal path between the second terminal and the fourth terminal; and a register configured to output a signal for controlling the first switch and the second switch to be turned on or off. In a first mode, the first switch and the second switch are turned off, a control signal is input to the third terminal, and a clock signal is output from the fourth terminal. In a second mode, the first switch and the second switch are turned on.

A clock circuit includes a voltage-controlled oscillator (VCO) having a control input and a first clock output. The clock circuit includes a frequency-locked loop (FLL) having an FLL input and a control output, the control output coupled to the control input. A microelectromechanical system (MEMS) resonator-based oscillator has a second clock output. A multiplexer has a first multiplexer input, a second multiplexer input, a selection input, and a multiplexer output. The first multiplexer input is coupled to the first clock output. The second multiplexer input is coupled to the second clock output. The multiplexer output is coupled to the FLL input.

An oscillator circuit includes: a first temperature detector, detecting an internal temperature of the oscillator circuit; a current generator, generating a heater current so that the internal temperature matches a target temperature; a first and second heater, heating the resonator and the integrated circuit, respectively, based on the heater current; a second temperature detector, detecting a temperature of the integrated circuit; a first compensation voltage generation circuit, generating a first compensation voltage for compensating for a frequency variation due to a temperature change in the integrated circuit, based on a detection result of the second temperature detector; a second compensation voltage generation circuit, generating a second compensation voltage for compensating for a frequency variation due to a temperature change in the resonator, based on a detection result of the first temperature detector; and an oscillator, generating an oscillation signal based on the first and second compensation voltages.

The present invention relates to systems including an acoustic wave resonator and an active shunt capacitance cancelling oscillator circuit. Such systems can be used in biosensing methods, while avoiding impedance distortion and phase shift anomalies.

An acoustic-wave device with active calibration mechanism is provided. The acoustic-wave device with active calibration mechanism includes at least one adjustable acoustic-wave duplexer, a frequency discriminator and a control circuit. The adjustable acoustic-wave duplexer has a first terminal point, a second terminal point and a third terminal point. The adjustable acoustic-wave duplexer includes a TX filter, an RX filter, a first loop switch and a second loop switch. The first loop switch is used for conducting a first loop. The second loop switch is used for conducting a second loop. The control circuit adjusts the operating frequency of the TX filter according to a first loop calibration signal. The control circuit adjusts the operating frequency of the operating frequency of the RX filter according to the second loop calibration signal.

A bulk acoustic wave (BAW) resonator includes a substrate having a top side surface and a bottom side surface. A Bragg mirror is on the top side surface of the substrate. A bottom electrode layer is on the Bragg mirror, and a piezoelectric layer is on the bottom electrode layer. A top dielectric layer is on the piezoelectric layer, and a top electrode layer is on the top dielectric layer. The bottom side surface of the substrate has a surface roughness of at least 1 ?m root mean square (RMS).