The present invention is related to a clock generating device for generating an internal clock signal having a frequency correlated with a clock frequency of an external oscillator when the clock frequency of the external oscillator is not specified in advance. A clock generating device 105 comprises a memory 134 and a PLL circuit 120. The memory 134 is configured to store information about a frequency of an external clock signal generated by an external oscillator 200 at a predetermined timing. The PLL circuit 120 generates a second clock signal correlated with a first clock signal based on the information stored in the memory 134.

Packaged integrated circuit devices include an oscillator circuit having a resonator (e.g., quartz crystal, MEMs, etc.) associated therewith, which is configured to generate a periodic reference signal. A built-in self-test (BIST) circuit is provided, which is selectively electrically coupled to first and second terminals of the resonator during an operation by the BIST circuit to test at least one performance characteristic of the resonator, such as at least one failure mode. These test operations may occur during a built-in self-test time interval when the oscillator circuit is at least partially disabled. In this manner, built-in self-test circuitry may be utilized to provide an efficient means of testing a resonating element/structure using circuitry that is integrated within an oscillator chip and within a wafer-level chip-scale package (WLCSP) containing the resonator.

An oscillator circuit has a reconfigurable oscillator amplifier. The reconfigurable oscillator amplifier is used to be coupled to a resonant circuit in parallel. The reconfigurable oscillator amplifier supports different circuit configurations for different operation modes, respectively. The reconfigurable oscillator amplifier has at least one circuit component shared by the different circuit configurations. The reconfigurable oscillator amplifier employs one of the different circuit configurations under one of the different operation modes.

A crystal oscillator and a phase noise reduction method thereof are provided. The crystal oscillator may include a crystal oscillator core circuit, a first bias circuit and a phase noise reduction circuit, the first bias circuit is coupled to an output terminal of the crystal oscillator core circuit, and the phase noise reduction circuit is coupled to the output terminal of the crystal oscillator core circuit. In operations of the crystal oscillator, the crystal oscillator core circuit is configured to generate a sinusoidal wave. The first bias circuit is configured to provide a first voltage level to be a bias voltage of the sinusoidal wave. The phase noise reduction circuit is configured to reset the bias voltage of the sinusoidal wave in response to a voltage level of the sinusoidal wave exceeding a specific voltage range. For example, the specific voltage range is determined according to a second voltage level.

A crystal oscillator and a phase noise reduction method thereof are provided. The crystal oscillator may include a crystal oscillator core circuit, a first bias circuit and a phase noise reduction circuit, the first bias circuit is coupled to an output terminal of the crystal oscillator core circuit, and the phase noise reduction circuit is coupled to the output terminal of the crystal oscillator core circuit. In operations of the crystal oscillator, the crystal oscillator core circuit is configured to generate a sinusoidal wave. The first bias circuit is configured to provide a first voltage level to be a bias voltage of the sinusoidal wave. The phase noise reduction circuit is configured to reset the bias voltage of the sinusoidal wave in response to a voltage level of the sinusoidal wave exceeding a specific voltage range. For example, the specific voltage range is determined according to a second voltage level.

A resonator element includes a substrate having a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view. Excitation electrodes are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view. When Cs is a distance between the center of the regions overlapping each other and the center of the substrate in the plan view, a relation of 105 μm<Cs<130 μm is satisfied.

A resonator element includes a substrate having a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view. Excitation electrodes are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view. When Cs is a distance between the center of the regions overlapping each other and the center of the substrate in the plan view, a relation of 105 μm<Cs<130 μm is satisfied.

An oven controlled crystal oscillator includes a crystal oscillator, a temperature control circuit, and a control integrated circuit. The crystal oscillator includes a crystal resonator and an oscillator circuit. The temperature control circuit includes a heater resistor, a thermistor, a first resistor, a second resistor, a third resistor, a differential amplifier, a thermosensor, and a fourth resistor. The thermosensor is disposed in parallel to the first resistor. The thermosensor has one end to which the supply voltage is supplied. The fourth resistor has one end connected to another end of the thermosensor and another end that is grounded. The control integrated circuit includes a digital variable resistor and a controller. The digital variable resistor is connected to the thermosensor in parallel. The controller adjusts a resistance value of the digital variable resistor based on a digital control signal input from outside.

An oscillator circuit with an oscillator stage and a first current source arranged to drive the oscillator stage is presented. The oscillator stage has an oscillator stage input terminal, an oscillator stage output terminal, an oscillator arranged to provide an oscillating signal between the oscillator stage input terminal and the oscillator stage output terminal. The oscillator circuit has an operational amplifier with an inverting input, a non-inverting input and an operational amplifier output. The oscillator stage input terminal and the oscillator stage output terminal are coupled to the inverting input and non-inverting input. The operational amplifier output is coupled to the oscillator stage input terminal such that the oscillator stage input terminal and the oscillator stage output terminal are controlled to have a same DC voltage level.

A vibration device has a substrate including a first surface and a second surface located on an opposite side to the first surface, a heater provided on the first surface side of the substrate, a temperature sensor provided on the first surface side of the substrate, a vibration element disposed on the first surface side of the substrate, a lid including a third surface joined on the first surface side and a fourth surface located on an opposite side to the third surface, and a circuit provided on one of the first surface, the second surface and the fourth surface, and including a temperature control circuit configured to control the heater based on an output of the temperature sensor.