A mobile terminal including an up-converter converting a baseband (BB) signal into a radio frequency (RF) signal and a controller controlling a voltage applied to the up-converter is provided. The up-converter includes a first transistor and a second transistor each having a gate to which a baseband voltage is applied, a third transistor having a drain connected in parallel to a drain of the first transistor, and a fourth transistor having a drain connected in parallel to a drain of the second transistor, and the up-converter and the mobile terminal with improved phase linearity characteristics may be provided.

The present invention is to provide a mixing circuit, comprising: a first transistor; a second transistor; a third transistor; a first connection point connected to a gate terminal of the first transistor, a drain terminal of the second transistor and a source terminal of the third transistor; a second connection point connected to a source terminal of the first transistor and a gate terminal of the second transistor; and a third connection point connected to a drain terminal of the first transistor and a drain terminal of the third transistor.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

An embodiment integrated electronic device comprises a mixer module including a voltage/current transconductor stage including first transistors and connected to a mixing stage including second transistors, wherein the mixing stage includes a resistive degeneration circuit connected to the sources of the second transistors and a calibration input connected to the gates of the second transistors and intended to receive an adjustable calibration voltage, and the sources of the first transistors are directly connected to a cold power supply point.

A frequency tripler circuit includes an amplifier to receive a balanced input signal at an input frequency and outputs a balanced signal at a second harmonic of the input frequency. The frequency tripler circuit includes a passive double balanced mixer coupled to an output of the amplifier to receive the balanced signal at the second harmonic and the balanced input signal to generate an output balanced signal having a frequency triple the input frequency.

The invention discloses a power mixer, radio frequency circuit, device and equipment, and belongs to the technical field of electronics and communication. The power mixer includes a mixer module, which amplifies an analog baseband current signal by a silicon germanium heterojunction bipolar transistor amplifying circuit, and converts a local oscillator voltage signal into a local oscillator current signal by a silicon germanium heterojunction bipolar transistor switching circuit. The silicon germanium heterojunction bipolar transistor switching circuit receives an amplified analog baseband current signal, and mixes the amplified analog baseband current signal and the local oscillator current signal into a radio frequency current signal; and a transformer module, which converts the radio frequency current signal into a radio frequency power signal and then outputs the radio frequency power signal from the power mixer.

One embodiment is a reconfigurable mixer topology for selectively implementing one of a harmonic rejection mixer (HRM) and a subharmonic mixer (SHM), the reconfigurable mixer topology comprising a mixer core comprising a plurality of differential mixers each having a first clock input and a second clock input; a clock generator for generating a plurality of clock signals each having a different phase; and a clock distributor for distributing the plurality of clock signals to the first and second clock inputs of the differential mixers in accordance with a designated operation of the reconfigurable mixer as an HRM or an SHM.

A method for manufacturing a semiconductor device including an upper-channel implant transistor is provided. The method includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is shallowly implanted in an upper portion of the first region of the fins but not in the second regions and not in a lower portion of the first region of the fins. A gate structure extending in a second direction perpendicular to the first direction is formed overlying the first region of the fins, and source/drains are formed overlying the second regions of the fins, thereby forming an upper-channel implant transistor.

An electronic device may include wireless circuitry with a baseband processor, a transceiver, a front-end module, and an antenna. The transceiver may include mixer circuitry. The mixer circuitry may include switches controlled by oscillator signals. The mixer circuitry may also include oscillator phase noise cancelling capacitors controlled by inverted oscillator signals. Operated in this way, the mixer circuitry exhibits improved noise figure performance.