RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

The present disclosure relates to added isolation between transistors in a multiple path amplifier circuit. The multiple path amplifier circuit includes a substrate, a first transistor on the substrate in a first path, and a second transistor on the substrate in a second path. The multiple path amplifier circuit also includes at least one electrical connection associated with the first and the second transistors and positioned to at least partially extend between the first path and the second path.

A Doherty amplifier includes a peaking amplifier, a carrier amplifier, and a combining node electrically connected to the carrier amplifier and the peaking amplifier. The Doherty amplifier includes a harmonic control circuit coupled to the combining node. The harmonic control circuit includes an inductor and a capacitor and the inductor and capacitor are connected in series between the first current conducting terminal and a ground reference node. An inductance value of the inductor of the harmonic control circuit and a capacitance value of the capacitor of the harmonic control circuit are selected to terminate second order harmonic components of a fundamental frequency of a signal generated by the carrier amplifier.

An envelope tracking (ET) integrated circuit (ETIC) operable with multiple types of power amplifiers is provided. The ETIC is configured to provide one or more ET voltages to a power amplifier(s) for amplifying a radio frequency (RF) signal. In embodiments disclosed herein, the ETIC can be configured to generate the ET voltages at same or different voltage levels based on specific types of the power amplifier(s), such as multi-stage power amplifier and Doherty power amplifier, and for a wider modulation bandwidth of the RF signal. As such, the ETIC can be flexibly adapted to enable a variety of power management scenarios and/or topologies.

An amplitude and phase control device includes a signal dividing unit to divide a transmission signal into first and second signals and output the first and second signals to a Doherty amplifier, an error calculating unit to acquire, from the Doherty amplifier, a synthesized signal of first and second signals amplified by the Doherty amplifier, multiply the synthesized signal by a reciprocal of a gain of the Doherty amplifier, and calculate an error between a synthesized signal after being multiplied by the reciprocal and the transmission signal, and a controlling unit to control an amplitude of each of the first signal and the second signal output from the signal dividing unit depending on the error calculated by the error calculating unit, and control a phase difference between the first signal output from the signal dividing unit and the second signal output from the signal dividing unit depending on the error.

A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

A modulated RF carrier produced at the output of the polar transmitter's switch-mode power amplifier (SMPA) is conveyed to an output filter network comprising a harmonic low-pass filter (LPF) connected in parallel with an absorptive high-pass filter (HPF). Together the harmonic LPF and absorptive HPF pass the fundamental component of the modulated RF carrier to the polar transmitter's load while also absorbing higher harmonic components that would otherwise be undesirably reflected back toward the output of the SMPA.

A multiple-path amplifier (e.g., a Doherty amplifier) includes first and second transistors (e.g., main and peaking transistors) with first and second output terminals, respectively, all of which is integrally-formed with a semiconductor die. A signal path through the second transistor extends in a direction from a control terminal of the second transistor to the second output terminal, where the second output terminal corresponds to or is closely electrically coupled to a combining node. The amplifier also includes an integrated phase delay circuit that is configured to apply an overall phase delay (e.g., 90 degrees) to a signal carried between the first and second output terminals. The integrated phase delay circuit includes delay circuit wirebonds coupled between the first and second output terminals, and the delay circuit wirebonds extend in a third direction that is angularly offset from (e.g., perpendicular to) the second direction.

Various embodiments relate to an integrated circuit including a transistor device having input and output terminals, and an inductor-capacitor (LC) circuit coupled to one of the terminals of the transistor device. The LC circuit includes a capacitor having a top plate and a bottom plate, a inductor having a coil structure, and a connector configured to couple the inductor and an interior portion the top plate of the capacitor. The inductor at least partially overlaps the capacitor.

An amplifier includes a package that includes a carrier amplifier having a carrier amplifier input and output, a peaking amplifier having a peaking amplifier input and output, and corresponding input and output leads. The package includes a first integrated passive device including a first capacitor structure. The first integrated passive device includes a first contact pad coupled to the peaking amplifier output and a second contact pad coupled to the peaking output lead. The package includes a second integrated passive device including a second capacitor structure. The second integrated passive device includes a third contact pad coupled to the carrier amplifier output and a fourth contact pad coupled to the carrier output lead. The amplifier includes input circuitry a combining node configured to combine a carrier output signal and a peaking output signal.