Aspects of the disclosure relate to devices, wireless communication apparatuses, methods, and circuitry implementing a low noise amplifier (LNA) with phase-shifting circuitry to achieve a continuous phase at the output of the LNA. One aspect is an amplifier including a high gain active path comprising active circuitry, and a low gain path comprising passive circuitry and phase-shifting circuitry. In one or more aspects, the phase-shifting circuitry is configured to shift a phase of an input signal within the low gain path such that the phase of an output signal outputted from the low gain path approximately matches a phase of an output signal outputted from the high gain active path. In at least one aspect, a gain of the high gain active path is higher than a gain of the low gain passive path.

A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Bias schemes for cascode power amplifiers are disclosed. In certain embodiments, a power amplifier system includes a cascode power amplifier powered by a first supply voltage and that amplifies a radio frequency input signal, and a bias circuit including a voltage regulator that generates a regulated voltage and is powered by the first supply voltage. The bias circuit further includes a bias voltage generation circuit that receives the regulated voltage and generates at least one cascode bias voltage for the cascode power amplifier, a switch that gates a second supply voltage to generate a gated supply voltage, a bias current generation circuit that controls a bias current of the cascode power amplifier and is powered by the gated supply voltage, and a gating circuit that controls the switch based on the regulated voltage and the second supply voltage.

A data output device is provided. The data output device includes a converter circuit configured to generate a conversion signal based on an output signal; a boosting circuit configured to generate a boosting signal based on the output signal; and an output circuit configured to generate the output signal based on an input signal and a feedback signal, the feedback signal being based on the conversion signal and the boosting signal.

In one embodiment, a dual-mode power amplifier that can operate in different modes includes: a first pair of metal oxide semiconductor field effect transistors (MOSFETs) to receive and pass a constant envelope signal; a second pair of MOSFETs to receive and pass a variable envelope signal, where first terminals of the first pair of MOSFETs are coupled to first terminals of the second pair of MOSFETs, and second terminals of the first pair of MOSFETs are coupled to. second terminals of the second pair of MOSFETs; and a shared MOSFET stack coupled to the first pair of MOSFETs and the second pair of MOSFETs.

A semiconductor structure for RF applications comprises: a first μTP GaN transistor on an SOI wafer or die; and a first resistor connected to the gate of said first transistor.

A multi-frequency low noise amplifier includes an input matching network, an amplifying circuit and an output matching network. The input matching network includes a first out-of-band rejection circuit and a first frequency band selection circuit. The output matching network includes a second out-of-band rejection circuit and a second frequency band selection circuit. The first out-of-band rejection circuit can reject signal of any frequency band in the radio frequency signals so that signals of the remaining frequency bands can pass through. The first frequency band selection circuit can screen out the signals of reference frequency spots from the remaining frequency bands. The second frequency band selection circuit can screen out the signals of partial frequency spots from the amplified signals of reference frequency spots. The second out-of-band rejection circuit can reject the signal of any frequency spot in the signals of partial frequency spots.

A bias circuit includes a mirror current source and a current-to-voltage converter. A first terminal of the mirror current source is connected to a supply voltage terminal, a second terminal of the mirror current source is connected to a reference voltage terminal, and a third terminal of the mirror current source is connected to the current-to-voltage converter. A mirror current source is configured to acquire a supply voltage transmitted at the supply voltage terminal through the first terminal, acquire a reference voltage transmitted at the reference voltage terminal through the second terminal, and regulate the supply voltage by using the reference voltage and a preset parameter to obtain a mirror current corresponding to the supply voltage. The preset parameter is parameter information of the mirror current source. The current-to-voltage converter is configured to convert the mirror current into a voltage to provide a bias voltage based on the voltage.

Amplifier circuits, radio communication circuits, radio communication devices, and methods provided in this disclosure provide an amplifier circuit. The amplifier circuit may include an amplifier configured to amplify an input signal to provide an output signal. The amplifier circuit may further include an amplifier stack including a first transistor coupled to the amplifier. The amplifier stack may be configured to receive the output signal to amplify the output signal. The amplifier stack may be configured to receive an input control signal to control the first transistor based on an envelope of the input signal.

Adaptive bias networks include small transistors connected to adjust gate bias voltage of one or more transistors of an amplifier or amplifier stage, or in a main or auxiliary path of a compound amplifier such as a Doherty amplifier. The small transistors are sized to avoid additional loading of the input. The adaptive bias circuits of preferred embodiments adjust the gate bias to produce a boost in gate bias voltage of an nFET transistor when the input power is in an upper portion of the amplifier or amplifier stage's input power range, thereby increasing the gain, and reduce gate bias voltage of a pFET transistor in the upper portion of the amplifier's input power range, thereby also increasing the gain. The adaptive bias networks can be implemented with varactors to vary DC voltage across the varactor to change its capacitance and compensate changing input capacitance of the amplifier input FET.