A cross-connect switch architecture is described. A cross-connect switch device includes a cross-point switch array, a plurality of photo detectors and a plurality of amplifiers. The cross-point switch array includes a plurality of switches. Each switch is coupled between a respective photo detector and a respective amplifier and is configured to couple the respective photo detector to the respective amplifier when the switch is selected.

A method and circuit are provided for implementing enhanced CMOS inverter based optical Transimpedance Amplifiers (TIAs). A transimpedence amplifer (TIA) includes a photo-detector, and the TIA is formed by a first TIA inverter and a second TIA inverter. The first TIA inverter has an input from a cathode side of the photo-detector and the second inverter has an input from an anode side of the photo-detector. A replica TIA is formed by two replica inverters, coupled to a respective input to a first operational amplifier and a second operational amplifier. The first operational amplifier and the second operational amplifier have a feedback configuration for respectively regulating a set voltage level at the cathode side of the photo-detector input of the first inverter and at the anode side of the photo-detector input of the second inverter.

A method and circuit are provided for implementing enhanced CMOS inverter based optical Transimpedance Amplifiers (TIAs). A transimpedance amplifier (TIA) includes a photo-detector, and the TIA is formed by a first TIA inverter and a second TIA inverter. The first TIA inverter has an input from a cathode side of the photo-detector and the second inverter has an input from an anode side of the photo-detector. A replica TIA is formed by two replica inverters, coupled to a respective input to a first operational amplifier and a second operational amplifier. The first operational amplifier and the second operational amplifier have a feedback configuration for respectively regulating a set voltage level at the cathode side of the photo-detector input of the first inverter and at the anode side of the photo-detector input of the second inverter.

Techniques are provided for a transimpedance amplifier (TIA). A TIA implementing the techniques according to an embodiment includes a pre-amplifier stage configured to amplify an input signal. The pre-amplifier stage includes a first P-channel metal oxide semiconductor field effect transistor (MOSFET) (P1), a second P-channel MOSFET (P2), a first N-channel MOSFET (N1), and a second N-channel MOSFET (N2), coupled in series. The gates of P1 and N2 are driven by the input signal. The output of the pre-amplifier stage is provided at a coupling between the drain of P2 and the drain of N1. The pre-amplifier stage also includes an active resistor network configured to provide a variable resistance based on a provided current bias generated from a gain control signal. The active resistor network is coupled between the gate of P1 and the drain of P2. The variable resistance is used to control the gain of the pre-amplifier stage.