Certain aspects of the present disclosure provide amplifiers. Certain aspects of the present disclosure provide methods and apparatus for protecting an such amplifiers, for example an audio amplifier, or a delta-sigma modulator from saturation. One example amplifier generally includes an output stage comprising a plurality of transistors; and a feedback network having an input coupled to an output of the output stage and comprising a plurality of integrators connected in series. At least one of the plurality of integrators generally includes an operational amplifier having an input and an output, a first resistive element coupled to the input of the operational amplifier, a capacitive element coupled between the input and the output of the operational amplifier; and a first switch coupled between the input and the output of the operational amplifier. For certain aspects, the amplifier may be a class-D amplifier or a direct digital feedback amplifier (DDFA).

Certain aspects of the present disclosure provide methods and apparatus for dynamically managing the dead time between turning on output power stage transistors in amplifiers, such as audio amplifiers. One example method of operating an amplifier generally includes generating a drive signal based on an input signal; amplifying the drive signal by alternatively driving a first transistor and a second transistor with a time between deactivating the first transistor and activating the second transistor; and adjusting the time based on a parameter of the input signal or the drive signal, during the amplifying. For example, the parameter may include an amplitude of the input signal, a duty cycle of the drive signal, or a duty cycle of a modulated signal (e.g., a pulse-width modulated signal) generated based on the input signal. The input signal may be a digital audio input signal.

Certain aspects of the present disclosure provide methods and apparatus for dynamically managing the dead time between turning on output power stage transistors in amplifiers, such as audio amplifiers. One example method of operating an amplifier generally includes generating a drive signal based on an input signal; amplifying the drive signal by alternatively driving a first transistor and a second transistor with a time between deactivating the first transistor and activating the second transistor; and adjusting the time based on a parameter of the input signal or the drive signal, during the amplifying. For example, the parameter may include an amplitude of the input signal, a duty cycle of the drive signal, or a duty cycle of a modulated signal (e.g., a pulse-width modulated signal) generated based on the input signal. The input signal may be a digital audio input signal.

A class D amplifier includes a self-oscillating class D amplification circuit that is driven by an output current signal; and a voltage-current converting circuit that outputs an output current signal in response to an input signal voltage and an output signal voltage from a feedback signal voltage.

A self-oscillating class D amplifier includes an integration circuit configured to integrate an input signal and output a result of the integration as an integrated signal, a comparator configured to receive the integrated signal at an inverting input terminal and output a pulse width modulation signal by comparing voltages of a non-inverting input terminal being grounded and the inverting input terminal, a switching circuit configured to power-amplify the pulse width modulation signal output from the comparator, a low-pass filter configured to extract an amplified output signal from the power-amplified pulse width modulation signal, a first feedback circuit configured to feed back the output signal of the low-pass filter to the inverting input terminal of the comparator, and a second feedback circuit configured to feed back the output signal of the low-pass filter to the integration circuit.

A self-oscillating class D amplifier includes an integration circuit configured to integrate an input signal and output a result of the integration as an integrated signal, a comparator configured to receive the integrated signal at an inverting input terminal and output a pulse width modulation signal by comparing voltages of a non-inverting input terminal being grounded and the inverting input terminal, a switching circuit configured to power-amplify the pulse width modulation signal output from the comparator, a low-pass filter configured to extract an amplified output signal from the power-amplified pulse width modulation signal, a first feedback circuit configured to feed back the output signal of the low-pass filter to the inverting input terminal of the comparator, and a second feedback circuit configured to feed back the output signal of the low-pass filter to the integration circuit.

Disclosed is a charge pump protection device including a power supply voltage, a charge pump to produce an output voltage higher than the power supply voltage, the charge pump including, a pumping capacitor to store voltage during a charging state and to discharge the voltage during a pumping state thereof, a plurality of switches to regulate the charging and pumping states, a charge pump capacitor to store the output voltage, and at least one current limiter in series with at least one of the plurality of switches to limit current and prevent an electrical failure of the charge pump.

Disclosed is a charge pump protection device including a power supply voltage, a charge pump to produce an output voltage higher than the power supply voltage, the charge pump including, a pumping capacitor to store voltage during a charging state and to discharge the voltage during a pumping state thereof, a plurality of switches to regulate the charging and pumping states, a charge pump capacitor to store the output voltage, and at least one current limiter in series with at least one of the plurality of switches to limit current and prevent an electrical failure of the charge pump.

Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.

Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.