Systems and methods related to power amplification and power supply control. A method of operating a power amplification control system can include receiving, by an interface, a transceiver control signal from a transceiver. The method can further include generating, by a power amplifier control component, a power amplifier control signal based on the transceiver control signal from the transceiver. The method can also include generating, by a power supply control component, a power supply control signal based on one or more of the transceiver control signal from the transceiver or a local control signal from the power amplifier control component.

Provided is a power amplification module that includes: a first amplification circuit that amplifies a first signal and outputs the amplified first signal as a second signal; a second amplification circuit that amplifies the second signal and outputs the amplified second signal as a third signal; and a feedback circuit that re-inputs/feeds back the second signal outputted from the first amplification circuit to the first amplification circuit as the first signal. The operation of the first amplification circuit is halted and the first signal passes through the feedback circuit and is outputted as the second signal at the time of a low power output mode.

Provided is a power amplification module that includes: a first amplification circuit that amplifies a first signal and outputs the amplified first signal as a second signal; a second amplification circuit that amplifies the second signal and outputs the amplified second signal as a third signal; and a feedback circuit that re-inputs/feeds back the second signal outputted from the first amplification circuit to the first amplification circuit as the first signal. The operation of the first amplification circuit is halted and the first signal passes through the feedback circuit and is outputted as the second signal at the time of a low power output mode.

A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

A power amplification module includes: a first bipolar transistor in which a radio frequency signal is input to a base and an amplified signal is output from a collector; a second bipolar transistor that is thermally coupled with the first bipolar transistor and that imitates operation of the first bipolar transistor; a third bipolar transistor in which a first control voltage is supplied to a base and a first bias current is output from an emitter; a first resistor that generates a third control voltage corresponding to a collector current of the second bipolar transistor at a second terminal; and a fourth bipolar transistor in which a power supply voltage is supplied to a collector, the third control voltage is supplied to a base, and a second bias current is output from an emitter.

A circuit includes an amplifier to amplify an input signal and generate an output signal. The circuit also includes a tuning network to tune frequency response of the amplifier. The tuning network includes at least one tunable capacitor, which includes at least one micro-electro mechanical system (MEMS) capacitor. The amplifier could include a first die, the at least one MEMS capacitor could include a second die, and the first die and the second die could be integrated in a single package. The at least one MEMS capacitor could include a MEMS superstructure over a control structure, which is to control the MEMS superstructure and tune the capacitance of the at least one MEMS capacitor.

A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

A power amplifier module includes a first power amplifier circuit configured to output a first amplified signal obtained by amplifying an input signal; a second power amplifier circuit configured to output a second amplified signal obtained by amplifying the first amplified signal; and a matching network connected between the first power amplifier circuit and the second power amplifier circuit. The matching network includes a first capacitor connected in series between the first power amplifier circuit and the second power amplifier circuit, a second capacitor connected in series between the first capacitor and the second power amplifier circuit, a first inductor connected between a point between the first capacitor and the second capacitor and a ground, and a second inductor connected in series between the first power amplifier circuit and the first capacitor.

The operative bandwidth of a broadband RF amplifier is improved by using a low-pass type broadband impedance transformer, instead of a broadband matching network, in a multi-stage impedance matching network connected, e.g., to the amplifier input. The multi-stage impedance matching network comprises three stages connected in series. The first stage is a low-pass type broadband impedance transformer that provides broadband fundamental impedances and high reflection for the second harmonics. The second stage is a phase shifter that controls the location of the second harmonic reflection coefficient phases. The third stage is a high-pass input matching circuit that transforms the complex conjugate device input impedance to a real impedance. The three-stage impedance matching network provides the fundamental and harmonic frequency impedances for broadband operations, as well as controllability of the second harmonic reflection coefficient phases where the device performances are consistent across the intended bandwidth. The multi-stage impedance matching network may be connected to the input of an RF amplifier, the output, or both.