Patent classifications
H03F3/191
POWER AMPLIFIER CIRCUIT
A power amplifier circuit includes a first transistor having a base or gate connected to a signal path, an emitter or source grounded via a first conductor, and a collector or drain, the first transistor amplifying an input signal supplied to the base or gate thereof along the signal path and outputting the amplified signal from the collector or drain thereof; a first element in a preceding stage of the first transistor, the first element having a first end connected to the signal path such that the first element is connected along a path branched from the signal path, and a second end grounded via a second conductor; and a first capacitor having a first end connected to a node between the emitter or source of the first transistor and the first conductor, and a second end connected to a node between the first element and the second conductor.
FRONT-END FOR PROCESSING 2G SIGNAL USING 3G/4G PATHS
Front-end for processing 2G signal using 3G/4G paths. In some embodiments, a front-end architecture can include a first amplification path and a second amplification path, with each being configured to amplify a 3G/4G signal, and the first amplification path including a phase shifting circuit. The front-end architecture can further include a splitter configured to receive a 2G signal and split the 2G signal into the first and second amplification paths, and a combiner configured to combine amplified 2G signals from the first and second amplification paths into a common output path. The front-end architecture can further include an impedance transformer implemented along the common output path to provide a desired impedance for the combined 2G signal.
FRONT-END FOR PROCESSING 2G SIGNAL USING 3G/4G PATHS
Front-end for processing 2G signal using 3G/4G paths. In some embodiments, a front-end architecture can include a first amplification path and a second amplification path, with each being configured to amplify a 3G/4G signal, and the first amplification path including a phase shifting circuit. The front-end architecture can further include a splitter configured to receive a 2G signal and split the 2G signal into the first and second amplification paths, and a combiner configured to combine amplified 2G signals from the first and second amplification paths into a common output path. The front-end architecture can further include an impedance transformer implemented along the common output path to provide a desired impedance for the combined 2G signal.
Power amplifier bias circuit with a mirror device to provide a mirror bias signal
A bias circuit for power amplifiers is disclosed. A power amplifier bias circuit can include an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration. The emitter follower device can be configured to provide a bias signal for a power amplifier at an output port. The power amplifier bias circuit can include a reference device configured to mirror an amplifying transistor of an amplifying device of the power amplifier. The emitter follower mirror device can be configured to provide a mirror bias signal to the reference device. A node between the emitter follower device and the emitter follower mirror device can have a voltage of approximately twice a base-emitter voltage (2Vbe) of the amplifying transistor.
Power amplifier bias circuit with a mirror device to provide a mirror bias signal
A bias circuit for power amplifiers is disclosed. A power amplifier bias circuit can include an emitter follower device and an emitter follower mirror device coupled to form a mirror configuration. The emitter follower device can be configured to provide a bias signal for a power amplifier at an output port. The power amplifier bias circuit can include a reference device configured to mirror an amplifying transistor of an amplifying device of the power amplifier. The emitter follower mirror device can be configured to provide a mirror bias signal to the reference device. A node between the emitter follower device and the emitter follower mirror device can have a voltage of approximately twice a base-emitter voltage (2Vbe) of the amplifying transistor.
Devices and methods for operating a charge pump
Devices and methods for operating a charge pump. In some implementations, a charge pump module includes a clock circuit configured generate to a first clock signal and a second clock signal, the first clock signal having a lower frequency than the second clock signal. The charge pump module also includes a driving circuit configured to generate a first set of clock signals based on the first clock signal and a second set of clock signals based on the second clock signal, the driving circuit coupled to the clock circuit. The charge pump module further includes a charge pump core including a set of capacitances, the charge pump core configured to charge the set of capacitances based the first set of clock signals and the second set of clock signals.
Devices and methods for operating a charge pump
Devices and methods for operating a charge pump. In some implementations, a charge pump module includes a clock circuit configured generate to a first clock signal and a second clock signal, the first clock signal having a lower frequency than the second clock signal. The charge pump module also includes a driving circuit configured to generate a first set of clock signals based on the first clock signal and a second set of clock signals based on the second clock signal, the driving circuit coupled to the clock circuit. The charge pump module further includes a charge pump core including a set of capacitances, the charge pump core configured to charge the set of capacitances based the first set of clock signals and the second set of clock signals.
Architecture of radio frequency front-end
An architecture of radio frequency front-end includes a power amplifier module integrated duplexer (PAMiD), an antenna and at least one tunable matching network; herein, the PAMiD includes a power amplifier, and the at least one tunable matching network is located between the power amplifier and the antenna, and is configured to adjust the impedance of the output end of the power amplifier and/or the impedance of the input end of the antenna.
Methods related to power amplification systems with adjustable common base bias
Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.
Methods related to power amplification systems with adjustable common base bias
Methods related to power amplification systems with adjustable common base bias. A method of implementing a power amplification system can include providing a cascode amplifier coupled to a radio-frequency input signal and coupled to a radio-frequency output. The method can further include providing a biasing component configured to apply one or more biasing signals to the cascode amplifier, the biasing component including a bias controller and one or more bias components. Each respective bias component may be coupled to a respective bias transistor.