A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

Apparatus and methods for low noise amplifiers (LNAs) are provided herein. In certain configurations, an LNA includes a gain stage and a bypass stage electrically connected in parallel with one another between an input and an output. The bypass stage and the gain stage are selectively activated based on a mode of the LNA. For example, the gain stage provides inverting amplification to an input signal received at the input in a gain mode. Additionally, the bypass stage provides a low gain path from the input to the output in a bypass mode. Additionally, the bypass stage includes a balun that provides inversion to the bypass stage such that a phase delay through the bypass stage is similar to a phase delay of the gain stage.

A power amplifying apparatus includes a first bias circuit configured to generate a first bias current by adding a boost current to a base bias current generated from a reference current, a first amplification circuit configured to receive the first bias current and amplify a signal input through an input terminal of the first amplification unit to output a first amplified signal, and a bias boosting circuit configured to generate the boost current, based on a magnitude of a harmonic component in the amplified signal output from the first amplification circuit.

Power amplifier circuitry includes an amplifier stage, a non-linear compensation network, and non-linear compensation control circuitry. The amplifier stage includes an input and an output, and is configured to receive an input signal at the input and provide an amplified output signal at the output. The non-linear compensation network is coupled between the input and the output of the amplifier stage. The non-linear compensation control circuitry is coupled to the non-linear compensation network and one or more of the input and the output of the amplifier stage. The non-linear compensation control circuitry is configured to adjust a capacitance of the non-linear compensation network to cancel a parasitic capacitance associated with the amplifier stage and thus reduce AM-PM distortion.

A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.

A power amplification module includes a first amplification transistor that receives a first signal outputs an amplified second signal from the collector thereof; and a bias circuit that supplies a bias current to the base of the first amplification transistor. The first bias circuit includes a first transistor that is diode connected and is supplied with a bias control current; a second transistor that is diode connected, the collector thereof being connected to the emitter of the first transistor; a third transistor, the base thereof being connected to the base of the first transistor, and the bias current being output from the emitter thereof; a fourth transistor, the collector thereof being connected to the emitter of the third transistor and the base thereof being connected to the base of the second transistor; and a first capacitor between the base and the emitter of the third transistor.

In some embodiments, a wireless local area network (WLAN) front-end can be implemented on a semiconductor die having a semiconductor substrate, and a power amplifier implemented on the semiconductor substrate and configured for WLAN transmit operation associated with a frequency range. The semiconductor die can further include a low-noise amplifier (LNA) implemented on the semiconductor substrate and configured for WLAN receive operation associated with the frequency range. The semiconductor die can further include a transmit/receive switch implemented on the semiconductor substrate and configured to support the transmit and receive operations.

In some embodiments, a wireless local area network (WLAN) front-end can be implemented on a semiconductor die having a semiconductor substrate, and a power amplifier implemented on the semiconductor substrate and configured for WLAN transmit operation associated with a frequency range. The semiconductor die can further include a low-noise amplifier (LNA) implemented on the semiconductor substrate and configured for WLAN receive operation associated with the frequency range. The semiconductor die can further include a transmit/receive switch implemented on the semiconductor substrate and configured to support the transmit and receive operations.

A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.

A power amplifier module includes a first current source that outputs a first current corresponding to a level control voltage for controlling a signal level of an amplified signal, a second current source that outputs a second current corresponding to the level control voltage, a first transistor in which an input signal and a first bias current are supplied to a base and an emitter is grounded, a second transistor in which an emitter is connected to a collector of the first transistor, the second current is supplied to a base, and a first amplified signal obtained by amplifying the input signal is output from a collector, and a third transistor in which the first current is supplied to a collector, a bias control current or voltage is supplied to a base, and the first bias current is supplied from an emitter to the base of the first transistor.