Systems and methods related to power amplification and power supply control. A power amplification control system can include an interface configured to receive a transceiver control signal from a transceiver. The power amplification control system can include a power amplifier control component configured to generate a power amplifier control signal based on the transceiver control signal from the transceiver and a power supply control component configured to generate a power supply control signal based on the transceiver control signal from the transceiver and to generate the power supply control signal based on a local control signal from the power amplifier control component.

Systems and methods related to power amplification and power supply control. A power amplification control system can include an interface configured to receive a transceiver control signal from a transceiver. The power amplification control system can include a power amplifier control component configured to generate a power amplifier control signal based on the transceiver control signal from the transceiver and a power supply control component configured to generate a power supply control signal based on the transceiver control signal from the transceiver and to generate the power supply control signal based on a local control signal from the power amplifier control component.

Amplifiers for radio-frequency applications. In some embodiments, a power amplifier die can include a semiconductor substrate and a plurality of narrow band power amplifiers implemented on the semiconductor substrate. Each narrow band power amplifier can be configured to operate with a high voltage in an average power tracking mode and be capable of being coupled to an output filter associated with a respective individual frequency band. Each narrow band power amplifier can be sized smaller than a wide band power amplifier configured to operate with more than one of the frequency bands associated with the plurality of narrow band power amplifiers.

Amplifiers for radio-frequency applications. In some embodiments, a power amplifier die can include a semiconductor substrate and a plurality of narrow band power amplifiers implemented on the semiconductor substrate. Each narrow band power amplifier can be configured to operate with a high voltage in an average power tracking mode and be capable of being coupled to an output filter associated with a respective individual frequency band. Each narrow band power amplifier can be sized smaller than a wide band power amplifier configured to operate with more than one of the frequency bands associated with the plurality of narrow band power amplifiers.

Switchless carrier aggregation. In some embodiments, a carrier aggregation circuit can include a first filter configured to allow operation in a first frequency band, and a second filter configured to allow operation in a second frequency band. The circuit can further include a first signal path implemented between the first filter and an output node, with the first signal path including a plurality of amplification stages configured to amplify a first signal. The first signal path can be substantially free of switches. The circuit can further include a second signal path implemented between the second filter and the output node, with the second signal path including a plurality of amplification stages configured to amplify a second signal. The second signal path can be substantially free of switches.

Switchless carrier aggregation. In some embodiments, a carrier aggregation circuit can include a first filter configured to allow operation in a first frequency band, and a second filter configured to allow operation in a second frequency band. The circuit can further include a first signal path implemented between the first filter and an output node, with the first signal path including a plurality of amplification stages configured to amplify a first signal. The first signal path can be substantially free of switches. The circuit can further include a second signal path implemented between the second filter and the output node, with the second signal path including a plurality of amplification stages configured to amplify a second signal. The second signal path can be substantially free of switches.

A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

A radio-frequency (RF) power amplifier includes a matching network comprising at least one matching network circuit corresponding to at least one symmetry node, at least one detector for detecting power of a detected signal at the symmetry node of the matching network, and generating at least one control signal according to the power of the detected signal, wherein the detected signal is an odd harmonic of an RF signal when the RF power amplifier operates in a differential mode or an even harmonic of the RF signal when the RF power amplifier operates in a common mode, and at least one adjusting circuit for adjusting the RF signal according to the at least one control signal.

A power splitter that amplifies an input radio-frequency (RF) signal. The power splitter uses a single transistor in a common emitter stage of a cascode amplifier and two or more common base stages of the cascode amplifier to amplify and to split the input RF signal. A common base biasing signal can be used to simultaneously enable two or more of the common base stages to generate two or more amplified RF output signals.